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ELM17410FA-VB Product details

Product introduction:

1. ELM17410FA-VB Product Introduction

ELM17410FA-VB is a high-efficiency N-type MOSFET designed with SC70-3 package, suitable for applications requiring high switching efficiency and miniaturization. The maximum drain-source breakdown voltage (VDS) of this MOSFET is 20V, which is suitable for low to medium voltage switching applications. The gate-source voltage (VGS) range is ±12V, which enables it to adapt to a variety of gate drive conditions. Its threshold voltage (Vth) range is 0.5V to 1.5V, ensuring effective conduction at lower gate voltages. ELM17410FA-VB uses Trench technology to provide low on-resistance: 48mΩ at VGS=2.5V, 40mΩ at VGS=4.5V, 36mΩ at VGS=10V, and a maximum drain current of 4A. This makes this MOSFET suitable for high-efficiency switching and load control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A 48mΩ 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N
2. ELM17410FA-VB Detailed Parameters

1. **Package Type**: SC70-3
- The **SC70-3** package is a small surface mount package with compact size and good thermal management characteristics, suitable for space-constrained applications.

2. **Channel Configuration**: Single Channel N-Type
- This MOSFET is designed as a single N-type channel and is suitable for positive voltage switching and control applications.

3. **Drain-Source Breakdown Voltage (VDS)**: 20V
- The maximum drain-source breakdown voltage is 20V, suitable for switching applications that handle low to medium voltages.

4. **Gate-Source Voltage (VGS)**: ±12V
- The maximum voltage that the gate can withstand is ±12V, providing flexible gate drive capabilities.

5. **Threshold voltage (Vth)**: 0.5~1.5V
- The threshold voltage range is 0.5V to 1.5V, ensuring that the MOSFET can be effectively turned on at a lower gate voltage.

6. **On-resistance (RDS(ON))**:
- **48mΩ @ VGS=2.5V**: On-resistance when the gate drive voltage is 2.5V.
- **40mΩ @ VGS=4.5V**: On-resistance when the gate drive voltage is 4.5V.
- **36mΩ @ VGS=10V**: On-resistance when the gate drive voltage is 10V.

7. **Drain current (ID)**: 4A
- The maximum drain current is 4A, suitable for medium current switching applications.

8. **Technology Type**: Trench
- Using Trench technology, it provides low on-resistance and high-efficiency switching performance, suitable for high-efficiency circuit design.

Domain and module applications:

III. ELM17410FA-VB Applicable Fields and Modules

1. **Power Management**
- ELM17410FA-VB is suitable for power management modules, especially in applications requiring high-efficiency switching and low on-resistance. Its compact package and low on-resistance help improve power conversion efficiency and overall system performance.

2. **Load Switch**
- This MOSFET is ideal for load switching applications, providing efficient switching control in a smaller size. For example, it can be used for power switching and load protection in electronic devices.

3. **Power Conversion**
- ELM17410FA-VB is suitable for various power conversion circuits, such as DC-DC converters and power adapters. Its low on-resistance helps reduce power loss and improve power conversion efficiency.

4. **Portable Devices**
- Due to the compact design of its SC70-3 package, the ELM17410FA-VB is ideal for portable electronic devices and small circuit designs such as smartphones, wearable devices, etc., where its small size and high performance excel.

5. **High-density circuits**
- In applications that require high-density board designs, the ELM17410FA-VB is able to provide an efficient switching solution in a limited space. Its compact package and high performance make it an ideal choice for space-constrained designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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