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ELM16800EA-S-VB Product details
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Product Introduction
**ELM16800EA-S-VB** is a high-performance dual N-channel MOSFET in a SOT23-6 package. Based on Trench technology, this MOSFET provides excellent conduction performance and low on-resistance. Its maximum drain-source voltage (VDS) is 20V, suitable for low-voltage switching applications. The maximum gate-source voltage (VGS) of the ELM16800EA-S-VB is ±12V, and the gate-source threshold voltage (Vth) is in the range of 0.5V to 1.5V. The on-resistance (RDS(ON)) of this MOSFET is 28mΩ @ VGS = 2.5V and 22mΩ @ VGS = 4.5V, respectively, and it can withstand a maximum drain current (ID) of 6A. Its compact SOT23-6 package makes the ELM16800EA-S-VB particularly suitable for space-constrained applications.
**ELM16800EA-S-VB** is a high-performance dual N-channel MOSFET in a SOT23-6 package. Based on Trench technology, this MOSFET provides excellent conduction performance and low on-resistance. Its maximum drain-source voltage (VDS) is 20V, suitable for low-voltage switching applications. The maximum gate-source voltage (VGS) of the ELM16800EA-S-VB is ±12V, and the gate-source threshold voltage (Vth) is in the range of 0.5V to 1.5V. The on-resistance (RDS(ON)) of this MOSFET is 28mΩ @ VGS = 2.5V and 22mΩ @ VGS = 4.5V, respectively, and it can withstand a maximum drain current (ID) of 6A. Its compact SOT23-6 package makes the ELM16800EA-S-VB particularly suitable for space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 6A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Portable Electronics**: The ELM16800EA-S-VB is ideal for switching and load control in portable electronic devices, such as smartphones, tablets, and portable battery-powered devices. Its small SOT23-6 package and high-efficiency performance enable it to play an important role in space-constrained designs.
2. **Battery Management System**: In battery management systems, this MOSFET can be used as a battery protection switch to prevent overcharging or over-discharging. Its low on-resistance and high current capability ensure the safety and reliability of the battery system.
3. **LED Drive Circuit**: In LED drive applications, the ELM16800EA-S-VB can be used to precisely control the switching operation of LEDs. Its low RDS(ON) ensures efficient current transfer, thereby improving the efficiency and stability of LED lighting.
4. **Small Electric Devices**: Used for motor control or switching of small electric devices, such as electric toys, power tools, and household appliances. The high current handling capability and compact package of this MOSFET are well suited for these applications.
5. **Power Management Module**: In various power management modules, the ELM16800EA-S-VB can be used as a switching element to help manage power flow and improve system efficiency. Its high performance and small size make it suitable for a variety of modern power management designs.
1. **Portable Electronics**: The ELM16800EA-S-VB is ideal for switching and load control in portable electronic devices, such as smartphones, tablets, and portable battery-powered devices. Its small SOT23-6 package and high-efficiency performance enable it to play an important role in space-constrained designs.
2. **Battery Management System**: In battery management systems, this MOSFET can be used as a battery protection switch to prevent overcharging or over-discharging. Its low on-resistance and high current capability ensure the safety and reliability of the battery system.
3. **LED Drive Circuit**: In LED drive applications, the ELM16800EA-S-VB can be used to precisely control the switching operation of LEDs. Its low RDS(ON) ensures efficient current transfer, thereby improving the efficiency and stability of LED lighting.
4. **Small Electric Devices**: Used for motor control or switching of small electric devices, such as electric toys, power tools, and household appliances. The high current handling capability and compact package of this MOSFET are well suited for these applications.
5. **Power Management Module**: In various power management modules, the ELM16800EA-S-VB can be used as a switching element to help manage power flow and improve system efficiency. Its high performance and small size make it suitable for a variety of modern power management designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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