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ELM16409EA-N-VB Product details
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1. ELM16409EA-N-VB Product Introduction
ELM16409EA-N-VB is a high-performance P-type MOSFET in SOT23-6 package, designed for low voltage and high-efficiency applications. The maximum drain-source breakdown voltage (VDS) of this MOSFET is -30V, which is suitable for operation in a negative voltage environment. Its gate-source voltage (VGS) is ±20V, ensuring stable operation under various gate drive voltages. The threshold voltage (Vth) is -1.7V, enabling it to turn on quickly at a lower gate voltage. ELM16409EA-N-VB uses Trench technology and has a low on-resistance: 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and can withstand a maximum drain current of -4.8A. This MOSFET is very suitable for switching circuits and power management applications, providing high efficiency and stable performance.
ELM16409EA-N-VB is a high-performance P-type MOSFET in SOT23-6 package, designed for low voltage and high-efficiency applications. The maximum drain-source breakdown voltage (VDS) of this MOSFET is -30V, which is suitable for operation in a negative voltage environment. Its gate-source voltage (VGS) is ±20V, ensuring stable operation under various gate drive voltages. The threshold voltage (Vth) is -1.7V, enabling it to turn on quickly at a lower gate voltage. ELM16409EA-N-VB uses Trench technology and has a low on-resistance: 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, and can withstand a maximum drain current of -4.8A. This MOSFET is very suitable for switching circuits and power management applications, providing high efficiency and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. ELM16409EA-N-VB Detailed parameter description
1. **Package type**: SOT23-6
- **SOT23-6** package is a miniaturized design suitable for high-density circuit boards, providing good heat dissipation performance and space saving.
2. **Channel configuration**: Single channel P-type
- This MOSFET is a single P-type channel design, suitable for negative voltage switching and reverse voltage applications.
3. **Drain-source breakdown voltage (VDS)**: -30V
- The maximum drain-source breakdown voltage is -30V, suitable for medium and low voltage negative voltage applications, ensuring reliable operation in negative voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, providing overvoltage protection and stability.
5. **Threshold voltage (Vth)**: -1.7V
- The threshold voltage is -1.7V, ensuring effective conduction at a lower gate voltage, suitable for low voltage drive applications.
6. **On-resistance (RDS(ON))**:
- **54mΩ @ VGS=4.5V**: On-resistance when the gate drive voltage is 4.5V.
- **49mΩ @ VGS=10V**: On-resistance when the gate drive voltage is 10V.
7. **Drain current (ID)**: -4.8A
- The maximum drain current is -4.8A, suitable for medium current switching applications.
8. **Technology type**: Trench
- Using Trench technology, it has low on-resistance and efficient switching performance, suitable for high-efficiency circuit design.
1. **Package type**: SOT23-6
- **SOT23-6** package is a miniaturized design suitable for high-density circuit boards, providing good heat dissipation performance and space saving.
2. **Channel configuration**: Single channel P-type
- This MOSFET is a single P-type channel design, suitable for negative voltage switching and reverse voltage applications.
3. **Drain-source breakdown voltage (VDS)**: -30V
- The maximum drain-source breakdown voltage is -30V, suitable for medium and low voltage negative voltage applications, ensuring reliable operation in negative voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, providing overvoltage protection and stability.
5. **Threshold voltage (Vth)**: -1.7V
- The threshold voltage is -1.7V, ensuring effective conduction at a lower gate voltage, suitable for low voltage drive applications.
6. **On-resistance (RDS(ON))**:
- **54mΩ @ VGS=4.5V**: On-resistance when the gate drive voltage is 4.5V.
- **49mΩ @ VGS=10V**: On-resistance when the gate drive voltage is 10V.
7. **Drain current (ID)**: -4.8A
- The maximum drain current is -4.8A, suitable for medium current switching applications.
8. **Technology type**: Trench
- Using Trench technology, it has low on-resistance and efficient switching performance, suitable for high-efficiency circuit design.
Domain and module applications：
III. ELM16409EA-N-VB Applicable Fields and Modules
1. **Switching Circuit**
- In the switching circuit, ELM16409EA-N-VB can be used as a negative voltage switch to control the on/off state of the load. Its low on-resistance and low threshold voltage enable it to operate efficiently at low gate voltages.
2. **Power Management**
- Suitable for use in power management modules, especially in situations where negative voltage or reverse current needs to be handled. This MOSFET can be used as an efficient switching element to help manage the distribution and conversion of power.
3. **Load Switch**
- In load switch applications, ELM16409EA-N-VB provides a reliable switching function that can control the on/off state of the load and ensure the stability of the load under different working conditions.
4. **Reverse Protection**
- Due to its negative voltage capability, this MOSFET is suitable for use as a reverse voltage protection circuit to prevent equipment from being damaged under negative voltage conditions.
5. **Low Voltage Circuits**
- The low threshold voltage and low on-resistance of the ELM16409EA-N-VB make it an ideal choice in low voltage circuit designs, improving the overall efficiency and performance of the circuit.
1. **Switching Circuit**
- In the switching circuit, ELM16409EA-N-VB can be used as a negative voltage switch to control the on/off state of the load. Its low on-resistance and low threshold voltage enable it to operate efficiently at low gate voltages.
2. **Power Management**
- Suitable for use in power management modules, especially in situations where negative voltage or reverse current needs to be handled. This MOSFET can be used as an efficient switching element to help manage the distribution and conversion of power.
3. **Load Switch**
- In load switch applications, ELM16409EA-N-VB provides a reliable switching function that can control the on/off state of the load and ensure the stability of the load under different working conditions.
4. **Reverse Protection**
- Due to its negative voltage capability, this MOSFET is suitable for use as a reverse voltage protection circuit to prevent equipment from being damaged under negative voltage conditions.
5. **Low Voltage Circuits**
- The low threshold voltage and low on-resistance of the ELM16409EA-N-VB make it an ideal choice in low voltage circuit designs, improving the overall efficiency and performance of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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