ELM16401EA-N-VB Product details
Product introduction:
ELM16401EA-N-VB is a high-efficiency P-channel MOSFET in SOT23-6 package. The device is designed for medium and low voltage power switching and power management applications, providing excellent performance and reliability. It has a drain-source withstand voltage of -30V and a maximum drain current of -4.8A. The threshold voltage of this MOSFET is -1.7V, and the on-resistance is 54mΩ at V_GS of 4.5V and 49mΩ at V_GS of 10V. ELM16401EA-N-VB uses Trench technology to achieve efficient current control and low-power operation in a small package, which is very suitable for compact circuit design and high-density applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: ELM16401EA-N-VB
- **Package**: SOT23-6
- **Configuration**: Single P channel
- **Drain-source withstand voltage (V_DS)**: -30V
- **Gate-source withstand voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ @ V_GS = 4.5V
- 49mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: -4.8A
- **Technology**: Trench
Domain and module applications:
1. **Power management**:
ELM16401EA-N-VB is very suitable for power management modules, especially in applications requiring P-channel MOSFET, such as power switch and load control. Its low on-resistance and high withstand voltage ensure the high efficiency and reliability of the power switch, suitable for portable devices, consumer electronics and power adapters.
2. **Battery protection**:
In the battery protection circuit, this MOSFET can effectively control the charging and discharging process of the battery to prevent overcurrent and reverse current from damaging the battery. Its compact SOT23-6 package makes it suitable for battery management systems and protection circuits of portable devices, providing an efficient battery protection solution.
3. **Load switch**:
ELM16401EA-N-VB can be used as a load switch, especially in applications requiring high switching efficiency and low power consumption. Its excellent current control capability and low on-resistance make it an ideal choice for motor drive, battery-powered load switching and other power management applications.
4. **Signal Switch**:
Due to its small package and high switching performance, this MOSFET is suitable for signal switching applications such as audio switching and analog signal switching. It is able to provide efficient signal control and is suitable for various communications and audio and video equipment to improve system performance and stability.
The efficient switching performance and small package of ELM16401EA-N-VB enable it to perform well in a variety of application scenarios such as power management, load switching and signal control, providing a reliable solution for compact electronic design.
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