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ELM14918AA-N-VB Product details

Product introduction:

ELM14918AA-N-VB MOSFET Product Introduction

ELM14918AA-N-VB is a high-performance half-bridge N-type MOSFET that uses advanced Trench technology and is packaged in SOP8. This MOSFET is designed as a half-bridge configuration with two N-type channels for high current and high voltage switching applications. Its drain-source voltage is 30V and the gate-source voltage range is ±20V, providing stable switching performance and low power consumption. The threshold voltage of ELM14918AA-N-VB is 1.7V, and its low on-resistance ensures efficient current handling capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 8A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Half-Bridge-N+N
ELM14918AA-N-VB MOSFET detailed parameter description

- **Model**: ELM14918AA-N-VB
- **Package**: SOP8
- **Configuration**: Half-bridge N-type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 8A
- **Technology**: Trench

Domain and module applications:

Applications and module examples

1. **Motor drive**: The half-bridge configuration of the ELM14918AA-N-VB is ideal for use in motor drive circuits, especially in applications that require high current and high efficiency. It can provide stable switching performance and low-power operation in motor drives, and is suitable for the control of stepper motors and DC motors.

2. **DC-DC converter**: In DC-DC converters, the ELM14918AA-N-VB can be used as an efficient switching element. Its low on-resistance and high current carrying capacity help improve conversion efficiency and reduce power consumption, making it suitable for power management and power conversion modules.

3. **Load switch**: This MOSFET is suitable for load switching applications, especially in the control of high current loads. Due to its half-bridge design, the ELM14918AA-N-VB can effectively control the direction of current flow and is widely used in battery-powered devices and current switching modules.

4. **Power Amplifier**: The half-bridge configuration of the ELM14918AA-N-VB makes it suitable for switching applications in power amplifier modules. It is capable of handling high current and high voltage signals, suitable for power amplifier designs that require high efficiency and stability.

Overall, the ELM14918AA-N-VB is a half-bridge N-type MOSFET that performs well in high current and high voltage applications. Its low RDS(ON) value and high current handling capability make it have a wide range of application potentials in motor drives, DC-DC converters, load switches, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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