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ELM14815AA-G-VB Product details

Product introduction:

ELM14815AA-G-VB Product Introduction

ELM14815AA-G-VB is a high-performance dual P-channel MOSFET in SOP8 package. This MOSFET is designed for low-voltage power management and switching applications, providing excellent electrical performance and reliability. Its drain-source withstand voltage is -30V and the maximum leakage current is -8A, which is suitable for switching requirements of medium current loads. The threshold voltage is -1.7V, and the on-resistance is 28mΩ when V_GS is 4.5V and 21mΩ when V_GS is 10V, ensuring efficient current control and low-power operation. ELM14815AA-G-VB uses Trench technology, has lower on-resistance and better switching performance, and is very suitable for use in circuits with dual P-channel configurations.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P -30V -1.7V -8A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P -30V -1.7V -8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P -30V -1.7V -8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P
Detailed parameter description

- **Model**: ELM14815AA-G-VB
- **Package**: SOP8
- **Configuration**: Dual P channel
- **Drain-source withstand voltage (V_DS)**: -30V
- **Gate-source withstand voltage (V_GS)**: ±12V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 28mΩ @ V_GS = 4.5V
- 21mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: -8A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

1. **Power switch**:
ELM14815AA-G-VB performs well in power management systems, especially as a power switch. Its low on-resistance and high withstand voltage make it an ideal choice for power path control, which can effectively reduce power consumption and improve power efficiency. It is commonly used in mobile devices, portable power supplies and power converters.

2. **Battery protection circuit**:
In the battery protection system, this MOSFET can be used as a load switch to protect the battery from overcurrent and reverse polarity damage. Its high current handling capability and low power consumption make it very suitable for use in battery management systems and protection circuits to ensure battery safety and reliability.

3. **Synchronous rectification**:
ELM14815AA-G-VB can be used in synchronous rectification applications, especially in low-voltage DC-DC converters. It can act as an efficient rectification switch, providing efficient energy conversion, and is suitable for synchronous rectification needs in computer power supplies, mobile phone chargers and other electronic devices.

4. **Inverter and load switch**:
In inverter and load switch applications, the dual P-channel design of this MOSFET can achieve bidirectional switch control, which is suitable for systems that require efficient load management and current control. It can be used in home appliances, automotive electronics and industrial automation systems to provide reliable switching performance and efficient power management.

In these application scenarios, the dual P-channel design and excellent electrical performance of the ELM14815AA-G-VB give it significant advantages in power management, protection circuits and rectification applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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