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ELM14600AA-VB Product details

Product introduction:

ELM14600AA-VB Product Introduction

ELM14600AA-VB is a high-performance dual-channel MOSFET packaged in SOP8, which includes an N-channel and a P-channel MOSFET. It has a drain-source withstand voltage of ±30V and is suitable for medium and low voltage switching and power management applications. The on-resistance of the N-channel and P-channel MOSFETs is R_DS(ON) = 24mΩ and 50mΩ respectively at V_GS = 4.5V, and 18mΩ and 40mΩ respectively at V_GS = 10V. The maximum leakage current of this MOSFET is ±8A, and it uses Trench technology to provide excellent performance in switching and amplification circuits. Its low on-resistance and high current capability make it very effective in applications requiring bidirectional current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Model**: ELM14600AA-VB
- **Package**: SOP8
- **Configuration**: Dual channel (N channel + P channel)
- **Drain-source withstand voltage (V_DS)**: ±30V
- **Gate-source withstand voltage (V_GS)**: ±20V
- **N channel threshold voltage (V_th)**: 1.6V
- **P channel threshold voltage (V_th)**: -1.7V
- **N channel on-resistance (R_DS(ON))**:
- 24mΩ @ V_GS = 4.5V
- 18mΩ @ V_GS = 10V
- **P channel on-resistance (R_DS(ON))**:
- 50mΩ @ V_GS = 4.5V
- 40mΩ @ V_GS = 10V
- **Maximum Drain Current (I_D)**: ±8A
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

1. **H-bridge driver**:
The dual-channel configuration of ELM14600AA-VB is very suitable for use in H-bridge circuits, enabling bidirectional drive of motors. Its low on-resistance and high current capability make motor control more efficient, reduce power consumption and heat generation, and are suitable for electric vehicles and various automation equipment.

2. **DC-DC converter**:
In DC-DC converters, ELM14600AA-VB can be used for efficient switch control. Its N-channel and P-channel MOSFETs can be used as synchronous rectification switches to reduce power consumption and improve conversion efficiency, and are suitable for applications such as computer power supplies and mobile phone chargers.

3. **Load switch**:
Due to its dual-channel design, this MOSFET is suitable for applications that require bidirectional load switches, such as power management systems and battery protection circuits. It can effectively switch power paths and control loads, and is suitable for a variety of consumer electronics and industrial equipment.

4. **Automotive electronics**:
In automotive electronic systems, such as power seats, window controls, and lighting controls, the dual-channel MOSFET of the ELM14600AA-VB provides efficient switching and driving capabilities, which can work stably in the automotive environment and ensure the reliability and safety of the system.

In these application scenarios, the dual-channel design and excellent performance of the ELM14600AA-VB make it outstanding in systems that require efficient bidirectional control and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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