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EL18816BA-S-VB Product details
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Product Introduction
**EL18816BA-S-VB** is a high-performance dual N-channel MOSFET in TSSOP8 package. It is configured as a common drain structure and is designed to integrate two N-channel MOSFETs in a single package. This MOSFET uses Trench technology and is suitable for medium voltage and high current switching applications. Its maximum drain-source voltage (V_DS) is 30V and has a low on-resistance (R_DS(ON)), enabling it to perform well in high-efficiency switching applications. The EL18816BA-S-VB is an ideal choice for high-efficiency switching circuits and power management systems, providing stable performance and good switching control.
**EL18816BA-S-VB** is a high-performance dual N-channel MOSFET in TSSOP8 package. It is configured as a common drain structure and is designed to integrate two N-channel MOSFETs in a single package. This MOSFET uses Trench technology and is suitable for medium voltage and high current switching applications. Its maximum drain-source voltage (V_DS) is 30V and has a low on-resistance (R_DS(ON)), enabling it to perform well in high-efficiency switching applications. The EL18816BA-S-VB is an ideal choice for high-efficiency switching circuits and power management systems, providing stable performance and good switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: EL18816BA-S-VB
- **Package**: TSSOP8
- **Configuration**: Common Drain - Dual N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 19mΩ @ V_GS = 4.5V
- 12mΩ @ V_GS = 10V
- **Drain current (I_D)**: 8.6A
- **Technology**: Trench
- **Model**: EL18816BA-S-VB
- **Package**: TSSOP8
- **Configuration**: Common Drain - Dual N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 19mΩ @ V_GS = 4.5V
- 12mΩ @ V_GS = 10V
- **Drain current (I_D)**: 8.6A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power management **
The dual N-channel MOSFET configuration and low on-resistance of the EL18816BA-S-VB make it ideal for switching circuits in power management systems. It can be used in power distribution, load switching, and power converters to provide efficient switching control and current management, improving the overall efficiency and stability of the power system.
**2. DC-DC converters **
In DC-DC converters, the high switching efficiency and low on-resistance of the EL18816BA-S-VB make it an ideal choice. It can be used as a high-side or low-side switch to ensure efficient operation of the converter and help improve conversion efficiency and reduce power consumption.
**3. Load switch **
This MOSFET is also suitable for load switching applications, such as controlling the switching state of the load in various electrical devices. Its high current carrying capacity and low on-resistance enable it to effectively control the load, ensuring stable operation and efficient switching control of the equipment.
**4. Battery Management**
In battery management systems, the low on-resistance and high current capability of the EL18816BA-S-VB make it suitable for battery protection and current monitoring circuits. It can help achieve precise control of the battery charging and discharging process, prevent overcurrent and overvoltage conditions, protect the battery and extend its service life.
**1. Power management **
The dual N-channel MOSFET configuration and low on-resistance of the EL18816BA-S-VB make it ideal for switching circuits in power management systems. It can be used in power distribution, load switching, and power converters to provide efficient switching control and current management, improving the overall efficiency and stability of the power system.
**2. DC-DC converters **
In DC-DC converters, the high switching efficiency and low on-resistance of the EL18816BA-S-VB make it an ideal choice. It can be used as a high-side or low-side switch to ensure efficient operation of the converter and help improve conversion efficiency and reduce power consumption.
**3. Load switch **
This MOSFET is also suitable for load switching applications, such as controlling the switching state of the load in various electrical devices. Its high current carrying capacity and low on-resistance enable it to effectively control the load, ensuring stable operation and efficient switching control of the equipment.
**4. Battery Management**
In battery management systems, the low on-resistance and high current capability of the EL18816BA-S-VB make it suitable for battery protection and current monitoring circuits. It can help achieve precise control of the battery charging and discharging process, prevent overcurrent and overvoltage conditions, protect the battery and extend its service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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