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ECH8655R-VB Product details

Product introduction:

ECH8655R-VB MOSFET Product Introduction

**ECH8655R-VB** is a high-performance dual N-Channel MOSFET in DFN8(3X2)-B package, designed for compact and high-efficiency applications. This MOSFET uses advanced Trench technology, with low on-resistance and high switching speed, making it ideal for applications that require high performance and miniaturization. Its maximum drain-source voltage (VDS) is 20V and the maximum drain current is 4.8A, providing stable performance. Low RDS(ON) helps improve overall circuit efficiency and reduce power consumption at different gate-source voltages.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X2)-B Dual-N 20V 1.5V 4.8A 17mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X2)-B Dual-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X2)-B Dual-N 20V 1.5V 4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X2)-B Dual-N 20V 1.5V 4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X2)-B Dual-N
ECH8655R-VB MOSFET detailed parameter description

- **Package**: DFN8(3X2)-B
- **Configuration**: Dual-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 17mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.8A
- **Technology**: Trench

Domain and module applications:

Product Application Examples

**1. Power Management**: The low RDS(ON) and high leakage current handling capability of the ECH8655R-VB make it suitable for power management circuits such as DC-DC converters and load switches. It can effectively control the flow of current, reduce power consumption, and improve power conversion efficiency, making it suitable for power modules that require high efficiency, such as power adapters and battery management systems.

**2. Portable Devices**: Due to its compact DFN8(3X2)-B package, the ECH8655R-VB is ideal for use in space-constrained portable electronic devices such as smartphones and wearable devices. Its low on-resistance helps improve the energy efficiency of the device and extend battery life, ensuring that the device can still operate efficiently in a compact design.

**3. Automation and Control Modules**: The ECH8655R-VB can be used for switching and drive applications in automation control systems, such as driving motors and actuators in industrial automation equipment. Its high switching speed and stability ensure that the system can respond quickly and provide reliable operation performance, suitable for use in situations where high-frequency switching is required.

**4. Small motor drive**: In small motor drive applications, the high current handling capability and low RDS(ON) of the ECH8655R-VB can effectively control the start and operation of the motor, ensuring that the motor operates in an efficient and reliable state. This makes it suitable for use in power tools, fans and other equipment that require small motors.

These application examples show the flexibility and efficiency of the ECH8655R-VB in a variety of high-performance and miniaturized design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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