Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Single-P |
-20V |
|
-0.8V |
-4A |
|
|
83mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Single-P |
-20V |
|
-0.8V |
-4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Single-P |
-20V |
|
-0.8V |
-4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
|
|
ECH8654-VB MOSFET detailed parameter description
- **Model**: ECH8654-VB
- **Package**: DFN8(3X2)-B
- **Configuration**: Unipolar P-type
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±8V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=4.5V
- 83mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: The low RDS(ON) value and high current carrying capacity of the ECH8654-VB make it ideal for high-efficiency management of switching power supplies. In power conversion modules, it can significantly reduce power losses and improve overall system efficiency.
2. **Load switch**: In various load switch applications, such as battery-powered devices, the ECH8654-VB provides reliable current switching capabilities. Its low on-resistance helps reduce power consumption and improve overall system performance.
3. **Motor drive**: In motor drive circuits, the ECH8654-VB can be used as a switching element in the motor driver. Its high current carrying capacity and low RDS(ON) value ensure that the motor has sufficient current delivery capability during startup and operation, while reducing heat generation.
4. **Power converter**: This MOSFET can be used in various power converters, such as the high-side switch in a DC-DC converter. Its excellent conduction performance and high current capability make it perform well in power conversion applications that require frequent switching and high efficiency.
Through these application examples, it can be seen that ECH8654-VB is a P-type MOSFET that performs well in multiple applications with high efficiency and high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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