DTU7N50SJ-VB Product details
Product introduction:
**DTU7N50SJ-VB** is a high-performance N-channel MOSFET in a TO252 package. This MOSFET is based on SJ_Multi-EPI technology and has excellent high voltage and low on-resistance performance. The maximum drain-source voltage (VDS) of DTU7N50SJ-VB is 500V, which is suitable for various applications requiring high voltage protection. Its gate-source voltage (VGS) is rated at ±30V, ensuring stability in harsh environments. The gate-source threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 550mΩ @ VGS = 10V, and the maximum drain current (ID) is 7A. This MOSFET is designed to handle high voltage and high current applications, while having a low on-resistance, which can effectively reduce power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 550mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power management**: DTU7N50SJ-VB is ideal for high-voltage power management systems such as switch mode power supplies (SMPS) and inverters. Its high voltage withstand capability and low on-resistance help improve the energy efficiency and stability of the system while reducing heat generation.
2. **Industrial equipment**: In industrial automation and control systems, DTU7N50SJ-VB can be used as a key component for motor drives and high-current load switches. Its high rated voltage and current handling capabilities ensure the stability and reliability of the equipment under high-power operation.
3. **Home appliances**: In home appliances such as air conditioners, refrigerators, etc., this MOSFET can be used for power switching and power regulation. Its high voltage handling capability and low RDS(ON) can optimize the energy efficiency of the equipment, reduce energy consumption and heat generation.
4. **Power Converters**: DTU7N50SJ-VB is also suitable for power converter applications such as battery chargers and uninterruptible power supply (UPS) systems. Its high voltage and current handling capabilities help improve conversion efficiency and enhance system reliability.
5. **Lighting Systems**: In high-power lighting applications, such as industrial lighting and LED lamps, DTU7N50SJ-VB can be used as a switching element and power regulator. Its high drain-source voltage and low on-resistance make it suitable for handling high-power loads, ensuring stable light source output.
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