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DTU5N80SJ-VB Product details
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1. DTU5N80SJ-VB Product Introduction
DTU5N80SJ-VB is a single-channel N-type MOSFET packaged in TO252, designed for high voltage applications. The MOSFET has a drain-source breakdown voltage (VDS) of 800V and supports a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction under moderate gate drive voltage. DTU5N80SJ-VB uses SJ_Multi-EPI technology, a superjunction multi-epitaxial technology that significantly improves the voltage blocking capability of the device and reduces the on-resistance. When the gate drive voltage is 10V, its on-resistance (RDS(ON)) is 1100mΩ and the drain current (ID) is 5A. This makes DTU5N80SJ-VB suitable for high voltage and medium current applications, providing stable switching performance and efficient current control.
DTU5N80SJ-VB is a single-channel N-type MOSFET packaged in TO252, designed for high voltage applications. The MOSFET has a drain-source breakdown voltage (VDS) of 800V and supports a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction under moderate gate drive voltage. DTU5N80SJ-VB uses SJ_Multi-EPI technology, a superjunction multi-epitaxial technology that significantly improves the voltage blocking capability of the device and reduces the on-resistance. When the gate drive voltage is 10V, its on-resistance (RDS(ON)) is 1100mΩ and the drain current (ID) is 5A. This makes DTU5N80SJ-VB suitable for high voltage and medium current applications, providing stable switching performance and efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of DTU5N80SJ-VB
1. **Package type**: TO252
- TO252 package is suitable for surface mount applications and has good heat dissipation and reliability.
2. **Channel configuration**: Single channel N-type
- This MOSFET is a single channel N-type, suitable for single current switching and control.
3. **Drain-source breakdown voltage (VDS)**: 800V
- Indicates that the maximum drain-source voltage that this MOSFET can withstand is 800V, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that the gate can withstand is ±30V, which provides sufficient overvoltage protection for the circuit.
5. **Threshold Voltage (Vth)**: 3.5V
- The minimum gate-source voltage required for the MOSFET to switch from the off state to the on state is 3.5V.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- The drain-source on-resistance is 1100mΩ at a gate drive voltage of 10V, providing low conduction losses.
7. **Drain Current (ID)**: 5A
- Under specified conditions (such as good heat dissipation), the maximum continuous drain current that the MOSFET can handle is 5A.
8. **Technology Type**: SJ_Multi-EPI
- Super junction multi-epitaxial technology is used to improve voltage blocking capability and reduce on-resistance, suitable for high voltage and high performance applications.
1. **Package type**: TO252
- TO252 package is suitable for surface mount applications and has good heat dissipation and reliability.
2. **Channel configuration**: Single channel N-type
- This MOSFET is a single channel N-type, suitable for single current switching and control.
3. **Drain-source breakdown voltage (VDS)**: 800V
- Indicates that the maximum drain-source voltage that this MOSFET can withstand is 800V, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that the gate can withstand is ±30V, which provides sufficient overvoltage protection for the circuit.
5. **Threshold Voltage (Vth)**: 3.5V
- The minimum gate-source voltage required for the MOSFET to switch from the off state to the on state is 3.5V.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- The drain-source on-resistance is 1100mΩ at a gate drive voltage of 10V, providing low conduction losses.
7. **Drain Current (ID)**: 5A
- Under specified conditions (such as good heat dissipation), the maximum continuous drain current that the MOSFET can handle is 5A.
8. **Technology Type**: SJ_Multi-EPI
- Super junction multi-epitaxial technology is used to improve voltage blocking capability and reduce on-resistance, suitable for high voltage and high performance applications.
Domain and module applications：
III. Application fields and modules of DTU5N80SJ-VB
1. **High voltage power management**
- In high voltage power management systems, such as high voltage AC-DC converters or high voltage DC-DC converters, DTU5N80SJ-VB can handle high voltage and medium current, provide reliable switching functions and efficient power conversion.
2. **Industrial motor drive**
- Suitable for industrial motor drive systems that require high voltage. Its high voltage tolerance and stable switching performance make it an ideal choice in motor control applications, ensuring the efficiency and reliability of motor operation.
3. **High voltage switch**
- In high voltage switching applications, such as power switches and inverters, the high voltage blocking capability of DTU5N80SJ-VB can effectively cope with the switching requirements under high voltage environments and provide stable switching operations.
4. **Lighting Control**
- Suitable for switch control in high voltage lighting systems, such as high voltage HID lamps and high power LED lighting. Its high voltage withstand capability ensures safety and stability under high voltage conditions.
5. **Power Factor Correction (PFC)**
- In the power factor correction module, DTU5N80SJ-VB can effectively control high voltage, help improve the power factor of the system and optimize the efficiency of the power system.
1. **High voltage power management**
- In high voltage power management systems, such as high voltage AC-DC converters or high voltage DC-DC converters, DTU5N80SJ-VB can handle high voltage and medium current, provide reliable switching functions and efficient power conversion.
2. **Industrial motor drive**
- Suitable for industrial motor drive systems that require high voltage. Its high voltage tolerance and stable switching performance make it an ideal choice in motor control applications, ensuring the efficiency and reliability of motor operation.
3. **High voltage switch**
- In high voltage switching applications, such as power switches and inverters, the high voltage blocking capability of DTU5N80SJ-VB can effectively cope with the switching requirements under high voltage environments and provide stable switching operations.
4. **Lighting Control**
- Suitable for switch control in high voltage lighting systems, such as high voltage HID lamps and high power LED lighting. Its high voltage withstand capability ensures safety and stability under high voltage conditions.
5. **Power Factor Correction (PFC)**
- In the power factor correction module, DTU5N80SJ-VB can effectively control high voltage, help improve the power factor of the system and optimize the efficiency of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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