DTU5N65SJ-VB Product details
Product introduction:
DTU5N65SJ-VB is a high-voltage power MOSFET manufactured using an advanced SJ (Super Junction) multi-epitaxial process. The device has a drain-source voltage capability of 650V and a drain current capability of 5A. The package adopts TO252 and a single N-channel design. Its low on-resistance and high withstand voltage characteristics make it suitable for high-power application scenarios such as high-voltage switching power supplies and industrial motor drives, which can effectively improve the efficiency and reliability of the system.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: DTU5N65SJ-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
Domain and module applications:
1. **High-voltage switching power supply (HV SMPS)**: The DTU5N65SJ-VB is suitable for high-voltage switching power supplies. Its 650V drain-source voltage capability enables it to handle switching operations with high voltage inputs. Its low on-resistance (1000mΩ) helps reduce power loss and improve power conversion efficiency, making it an ideal switch in power modules.
2. **Industrial motor drive**: In industrial motor drive applications, the 5A drain current and 650V withstand voltage capability of the DTU5N65SJ-VB enable it to handle the high current and high voltage requirements during motor start-up and operation. This MOSFET can provide stable switching performance to ensure the reliability and efficiency of the motor control system.
3. **Photovoltaic inverter**: The 650V drain-source voltage capability of this MOSFET is ideal for high-voltage DC to AC conversion applications in photovoltaic inverters. Low on-resistance helps reduce energy loss, improve the overall efficiency of the inverter, and optimize the performance of the photovoltaic system.
4. **Battery Management System (BMS)**: In the battery management system, DTU5N65SJ-VB can be used to control the charging and discharging process of the battery. Its high voltage and high current handling capabilities enable it to effectively manage the switching of the battery module to ensure the safety and reliability of the system.
In general, DTU5N65SJ-VB is a high-voltage, high-efficiency power MOSFET suitable for a variety of applications such as high-voltage switching power supplies, industrial motor drives, photovoltaic inverters, and battery management systems. Its excellent on-resistance and switching performance make it play an important role in these fields.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image