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DTU2N70SJ-VB Product details
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1. Product Introduction
DTU2N70SJ-VB is an N-channel power MOSFET in TO252 package, designed for high voltage applications. It can withstand a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, and has relatively high voltage resistance. The on-resistance (RDS(ON)) of this MOSFET is 2400mΩ, and it supports a continuous drain current (ID) of 2A at VGS=10V. DTU2N70SJ-VB uses super junction (SJ) and multi-epitaxy (Multi-EPI) technology to ensure that the device has stable performance and low conduction loss under high voltage environment.
DTU2N70SJ-VB is an N-channel power MOSFET in TO252 package, designed for high voltage applications. It can withstand a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, and has relatively high voltage resistance. The on-resistance (RDS(ON)) of this MOSFET is 2400mΩ, and it supports a continuous drain current (ID) of 2A at VGS=10V. DTU2N70SJ-VB uses super junction (SJ) and multi-epitaxy (Multi-EPI) technology to ensure that the device has stable performance and low conduction loss under high voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Continuous drain current (ID)**: 2A
- **Technology**: Super junction (SJ) and multi-epitaxy (Multi-EPI)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Continuous drain current (ID)**: 2A
- **Technology**: Super junction (SJ) and multi-epitaxy (Multi-EPI)
Domain and module applications：
3. Application fields and modules
The high voltage characteristics and moderate current capability of DTU2N70SJ-VB MOSFET make it suitable for a number of specific application fields:
1. **High-voltage switching power supply (HV-SMPS)**: DTU2N70SJ-VB is suitable for use as a switching element in high-voltage switching power supply systems. Its high voltage tolerance enables it to work stably in harsh power supply environments. Although the on-resistance is high, it can still provide good performance in some specific low-current applications.
2. **High-voltage inverter**: In high-voltage inverters, especially for solar or wind energy systems, DTU2N70SJ-VB can be used as a power switching element. Its high voltage tolerance ensures the reliable operation of the inverter and is suitable for handling high-voltage DC to AC conversion.
3. **Motor drive system**: In motor drive systems that require high voltage but low current, this MOSFET can be used to control the switching operation of high-voltage motors, such as some high-voltage power tools and equipment. Although its on-resistance is high, it can effectively control the motor if it is designed properly.
4. **High Voltage Power Management Module**: DTU2N70SJ-VB is suitable for use in power management modules where high voltage processing is required but very low conduction loss is not required, such as some industrial power supplies and equipment protection circuits. Its high voltage tolerance and stable performance can provide effective power control and protection functions.
The high voltage characteristics and moderate current capability of DTU2N70SJ-VB MOSFET make it suitable for a number of specific application fields:
1. **High-voltage switching power supply (HV-SMPS)**: DTU2N70SJ-VB is suitable for use as a switching element in high-voltage switching power supply systems. Its high voltage tolerance enables it to work stably in harsh power supply environments. Although the on-resistance is high, it can still provide good performance in some specific low-current applications.
2. **High-voltage inverter**: In high-voltage inverters, especially for solar or wind energy systems, DTU2N70SJ-VB can be used as a power switching element. Its high voltage tolerance ensures the reliable operation of the inverter and is suitable for handling high-voltage DC to AC conversion.
3. **Motor drive system**: In motor drive systems that require high voltage but low current, this MOSFET can be used to control the switching operation of high-voltage motors, such as some high-voltage power tools and equipment. Although its on-resistance is high, it can effectively control the motor if it is designed properly.
4. **High Voltage Power Management Module**: DTU2N70SJ-VB is suitable for use in power management modules where high voltage processing is required but very low conduction loss is not required, such as some industrial power supplies and equipment protection circuits. Its high voltage tolerance and stable performance can provide effective power control and protection functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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