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DTU2N65SJ-VB Product details
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Product Introduction
**DTU2N65SJ-VB** is a high voltage, low power N-Channel MOSFET in TO252 package using SJ_Multi-EPI technology. It is designed to provide high withstand voltage, stable switching performance and low power consumption. This MOSFET is very suitable for high voltage switching applications and power management systems requiring high reliability.
**DTU2N65SJ-VB** is a high voltage, low power N-Channel MOSFET in TO252 package using SJ_Multi-EPI technology. It is designed to provide high withstand voltage, stable switching performance and low power consumption. This MOSFET is very suitable for high voltage switching applications and power management systems requiring high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DTU2N65SJ-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Model**: DTU2N65SJ-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
**DTU2N65SJ-VB** is suitable for the following fields and modules:
1. **High voltage power switch**: Due to its high drain-source voltage (650V), DTU2N65SJ-VB is suitable for use as a switching element for high voltage power supplies, especially in applications where high voltage loads need to be controlled, such as switching power supplies and industrial power supplies.
2. **Inverter**: In inverter applications, DTU2N65SJ-VB can be used to control high voltage switching operations to help achieve efficient power conversion. Suitable for solar inverters and other power inverter applications.
3. **Motor control**: In applications where motor control is required, DTU2N65SJ-VB is able to provide stable switching performance and is suitable for high voltage motor drive systems, such as industrial motor control and high voltage motor starting circuits.
4. **High-voltage power equipment**: In power equipment such as transformers and inverters, the high withstand voltage characteristics of DTU2N65SJ-VB make it an ideal switching element to ensure stable operation of the equipment and provide reliable high-voltage handling capabilities.
5. **High-voltage lamp control**: In high-voltage lamp systems, this MOSFET can effectively control high-voltage loads and is suitable for lighting control systems that require stable high-voltage switching functions.
**DTU2N65SJ-VB** is suitable for the following fields and modules:
1. **High voltage power switch**: Due to its high drain-source voltage (650V), DTU2N65SJ-VB is suitable for use as a switching element for high voltage power supplies, especially in applications where high voltage loads need to be controlled, such as switching power supplies and industrial power supplies.
2. **Inverter**: In inverter applications, DTU2N65SJ-VB can be used to control high voltage switching operations to help achieve efficient power conversion. Suitable for solar inverters and other power inverter applications.
3. **Motor control**: In applications where motor control is required, DTU2N65SJ-VB is able to provide stable switching performance and is suitable for high voltage motor drive systems, such as industrial motor control and high voltage motor starting circuits.
4. **High-voltage power equipment**: In power equipment such as transformers and inverters, the high withstand voltage characteristics of DTU2N65SJ-VB make it an ideal switching element to ensure stable operation of the equipment and provide reliable high-voltage handling capabilities.
5. **High-voltage lamp control**: In high-voltage lamp systems, this MOSFET can effectively control high-voltage loads and is suitable for lighting control systems that require stable high-voltage switching functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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