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DTU2N60SJ-VB Product details
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Product Introduction
**DTU2N60SJ-VB** is a high voltage N-channel MOSFET in TO252 package, designed to handle drain-source voltage up to 600V, suitable for high voltage power switching applications. It has high drain current capability and good switching characteristics, and adopts SJ_Multi-EPI technology to provide excellent voltage resistance and reliability. Although RDS(ON) is relatively high, its excellent high voltage characteristics make it still competitive in specific applications.
**DTU2N60SJ-VB** is a high voltage N-channel MOSFET in TO252 package, designed to handle drain-source voltage up to 600V, suitable for high voltage power switching applications. It has high drain current capability and good switching characteristics, and adopts SJ_Multi-EPI technology to provide excellent voltage resistance and reliability. Although RDS(ON) is relatively high, its excellent high voltage characteristics make it still competitive in specific applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
1. **High Voltage Power Switching**:
DTU2N60SJ-VB is very suitable for high voltage power switching applications due to its high VDS of 600V. During the power conversion process, it can effectively handle high voltage loads and provide reliable switching control for high voltage power modules.
2. **Inverters**:
In inverter applications, the high withstand voltage characteristics of DTU2N60SJ-VB make it suitable for use in high voltage inverter circuits. Despite the high RDS(ON), it can work effectively in inverters that require high withstand voltage, ensuring the stability and reliability of the inverter.
3. **Motor Drives**:
In high voltage motor drive applications, this MOSFET can be used to control the start and operation of high voltage motors. Its high voltage handling capability and durability enable it to provide stable performance in industrial motor drive systems.
4. **Power Amplifiers**:
DTU2N60SJ-VB is suitable for power amplifier circuits that require high voltage resistance. It can withstand high voltage signals, thus ensuring stable operation of the power amplifier and good signal amplification effect.
5. **Home Appliances Control**:
Due to its high voltage resistance, this MOSFET can be used in high-voltage home appliance control systems such as air conditioners, electric water heaters, etc. Although the RDS(ON) is high, its high voltage tolerance makes it still practical in these applications.
These application areas demonstrate the applicability of DTU2N60SJ-VB in high voltage and high power environments, especially in situations where high voltage tolerance and reliability are required.
1. **High Voltage Power Switching**:
DTU2N60SJ-VB is very suitable for high voltage power switching applications due to its high VDS of 600V. During the power conversion process, it can effectively handle high voltage loads and provide reliable switching control for high voltage power modules.
2. **Inverters**:
In inverter applications, the high withstand voltage characteristics of DTU2N60SJ-VB make it suitable for use in high voltage inverter circuits. Despite the high RDS(ON), it can work effectively in inverters that require high withstand voltage, ensuring the stability and reliability of the inverter.
3. **Motor Drives**:
In high voltage motor drive applications, this MOSFET can be used to control the start and operation of high voltage motors. Its high voltage handling capability and durability enable it to provide stable performance in industrial motor drive systems.
4. **Power Amplifiers**:
DTU2N60SJ-VB is suitable for power amplifier circuits that require high voltage resistance. It can withstand high voltage signals, thus ensuring stable operation of the power amplifier and good signal amplification effect.
5. **Home Appliances Control**:
Due to its high voltage resistance, this MOSFET can be used in high-voltage home appliance control systems such as air conditioners, electric water heaters, etc. Although the RDS(ON) is high, its high voltage tolerance makes it still practical in these applications.
These application areas demonstrate the applicability of DTU2N60SJ-VB in high voltage and high power environments, especially in situations where high voltage tolerance and reliability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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