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DTU19P10-VB Product details
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Product Introduction
**DTU19P10-VB** is a high-performance single P-channel MOSFET in TO252 package. It uses Trench technology, has excellent switching performance and low on-resistance, and is suitable for applications requiring high voltage and high current carrying capacity. The maximum drain-source voltage (V_DS) of this MOSFET is -100V and can handle higher negative voltages. Its low threshold voltage (V_th) and low on-resistance make it particularly suitable for use in circuits that require efficient switching and current control.
**DTU19P10-VB** is a high-performance single P-channel MOSFET in TO252 package. It uses Trench technology, has excellent switching performance and low on-resistance, and is suitable for applications requiring high voltage and high current carrying capacity. The maximum drain-source voltage (V_DS) of this MOSFET is -100V and can handle higher negative voltages. Its low threshold voltage (V_th) and low on-resistance make it particularly suitable for use in circuits that require efficient switching and current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: DTU19P10-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- 120mΩ @ V_GS = 4.5V
- 100mΩ @ V_GS = 10V
- **Drain current (I_D)**: -16A
- **Technology**: Trench
- **Model**: DTU19P10-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (V_DS)**: -100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- 120mΩ @ V_GS = 4.5V
- 100mΩ @ V_GS = 10V
- **Drain current (I_D)**: -16A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
**1. Power Management**
DTU19P10-VB is suitable for power management applications, especially in situations where high voltage and high current handling are required. For example, it can be used for high-side switches in switching power supplies to help improve power efficiency and stability. In addition, its low on-resistance and high drain current capability make it excellent in power converters and voltage regulation circuits.
**2. Motor Drive**
This MOSFET is also suitable for motor drive circuits. Due to its high current carrying capacity and low on-resistance, it can effectively control and drive DC motors or stepper motors, ensuring efficient operation of motor systems. Common applications include power tools, electric vehicles, and various automation equipment.
**3. High-Side Switch**
In many switching circuits, the high voltage capability and low on-resistance of DTU19P10-VB make it an ideal high-side switch solution. It can be used to control high voltage loads such as high-power relays and industrial loads to ensure reliable switching control.
**4. Load protection**
DTU19P10-VB can be used in load protection circuits, such as overcurrent protection and short circuit protection. Its high current and high voltage handling capabilities can effectively protect circuits and components from damage. Its low on-resistance also helps reduce energy loss and improve overall circuit efficiency.
**1. Power Management**
DTU19P10-VB is suitable for power management applications, especially in situations where high voltage and high current handling are required. For example, it can be used for high-side switches in switching power supplies to help improve power efficiency and stability. In addition, its low on-resistance and high drain current capability make it excellent in power converters and voltage regulation circuits.
**2. Motor Drive**
This MOSFET is also suitable for motor drive circuits. Due to its high current carrying capacity and low on-resistance, it can effectively control and drive DC motors or stepper motors, ensuring efficient operation of motor systems. Common applications include power tools, electric vehicles, and various automation equipment.
**3. High-Side Switch**
In many switching circuits, the high voltage capability and low on-resistance of DTU19P10-VB make it an ideal high-side switch solution. It can be used to control high voltage loads such as high-power relays and industrial loads to ensure reliable switching control.
**4. Load protection**
DTU19P10-VB can be used in load protection circuits, such as overcurrent protection and short circuit protection. Its high current and high voltage handling capabilities can effectively protect circuits and components from damage. Its low on-resistance also helps reduce energy loss and improve overall circuit efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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