中文
English
DTU15N50SJ-VB Product details
Back to previous pageProduct introduction：
1. DTU15N50SJ-VB Product Introduction
DTU15N50SJ-VB is a single-channel N-type MOSFET packaged in TO252. This device has a drain-source breakdown voltage (VDS) of 500V and supports a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.3V, ensuring stable conduction under moderate gate drive voltage. DTU15N50SJ-VB uses SJ_Multi-EPI technology, a super junction multi-epitaxial technology that can significantly reduce on-resistance and improve switching performance. When the gate drive voltage is 10V, the on-resistance (RDS(ON)) of this MOSFET is 290mΩ, and the drain current (ID) can reach 15A. This product is suitable for high-voltage, high-current applications such as power management and switching circuits, providing high efficiency and stability.
DTU15N50SJ-VB is a single-channel N-type MOSFET packaged in TO252. This device has a drain-source breakdown voltage (VDS) of 500V and supports a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.3V, ensuring stable conduction under moderate gate drive voltage. DTU15N50SJ-VB uses SJ_Multi-EPI technology, a super junction multi-epitaxial technology that can significantly reduce on-resistance and improve switching performance. When the gate drive voltage is 10V, the on-resistance (RDS(ON)) of this MOSFET is 290mΩ, and the drain current (ID) can reach 15A. This product is suitable for high-voltage, high-current applications such as power management and switching circuits, providing high efficiency and stability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.3V | 15A | 290mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.3V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.3V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of DTU15N50SJ-VB
1. **Package type**: TO252
- TO252 is a common surface mount package with good heat dissipation performance, suitable for power MOSFET.
2. **Channel configuration**: Single channel N-type
- This MOSFET has an N-type channel, suitable for single-way switch control and current transmission.
3. **Drain-source breakdown voltage (VDS)**: 500V
- The maximum drain-source voltage that the MOSFET can withstand is 500V, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that the gate can withstand is ±30V, providing sufficient overvoltage protection for the circuit.
5. **Threshold Voltage (Vth)**: 3.3V
- The minimum gate-source voltage required for the transition from the off state to the on state is 3.3V.
6. **On-resistance (RDS(ON))**: 290mΩ @ VGS=10V
- The drain-source on-resistance is 290mΩ at a gate drive voltage of 10V, providing low conduction losses.
7. **Drain Current (ID)**: 15A
- Under specified conditions (such as good heat dissipation), the maximum continuous drain current that the MOSFET can handle is 15A.
8. **Technology Type**: SJ_Multi-EPI
- Super junction multi-epitaxial technology provides higher voltage blocking capability and lower conduction losses, suitable for high-performance applications.
1. **Package type**: TO252
- TO252 is a common surface mount package with good heat dissipation performance, suitable for power MOSFET.
2. **Channel configuration**: Single channel N-type
- This MOSFET has an N-type channel, suitable for single-way switch control and current transmission.
3. **Drain-source breakdown voltage (VDS)**: 500V
- The maximum drain-source voltage that the MOSFET can withstand is 500V, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that the gate can withstand is ±30V, providing sufficient overvoltage protection for the circuit.
5. **Threshold Voltage (Vth)**: 3.3V
- The minimum gate-source voltage required for the transition from the off state to the on state is 3.3V.
6. **On-resistance (RDS(ON))**: 290mΩ @ VGS=10V
- The drain-source on-resistance is 290mΩ at a gate drive voltage of 10V, providing low conduction losses.
7. **Drain Current (ID)**: 15A
- Under specified conditions (such as good heat dissipation), the maximum continuous drain current that the MOSFET can handle is 15A.
8. **Technology Type**: SJ_Multi-EPI
- Super junction multi-epitaxial technology provides higher voltage blocking capability and lower conduction losses, suitable for high-performance applications.
Domain and module applications：
III. Application fields and modules of DTU15N50SJ-VB
1. **Power management**
- In power management systems, such as AC-DC converters and DC-DC converters, DTU15N50SJ-VB is able to handle high voltage and high current, provide efficient switching control, and optimize power conversion efficiency.
2. **Motor drive**
- This MOSFET is suitable for high-power motor drives, such as industrial motors and power tools. Its high current capability and low on-resistance ensure efficient current control and reduce heat generation.
3. **High-voltage switch**
- In applications requiring high-voltage switching, such as UPS systems and inverters, DTU15N50SJ-VB is able to work stably under high voltage environments and provide reliable switching functions.
4. **Lighting Control**
- In high-power lighting systems, DTU15N50SJ-VB can be used in high-voltage switching and dimming circuits to ensure efficient current transmission and switch control.
5. **Power Factor Correction (PFC)**
- In power factor correction modules, this MOSFET can effectively reduce power consumption and improve system efficiency, optimize the power factor and improve the stability of the power system.
1. **Power management**
- In power management systems, such as AC-DC converters and DC-DC converters, DTU15N50SJ-VB is able to handle high voltage and high current, provide efficient switching control, and optimize power conversion efficiency.
2. **Motor drive**
- This MOSFET is suitable for high-power motor drives, such as industrial motors and power tools. Its high current capability and low on-resistance ensure efficient current control and reduce heat generation.
3. **High-voltage switch**
- In applications requiring high-voltage switching, such as UPS systems and inverters, DTU15N50SJ-VB is able to work stably under high voltage environments and provide reliable switching functions.
4. **Lighting Control**
- In high-power lighting systems, DTU15N50SJ-VB can be used in high-voltage switching and dimming circuits to ensure efficient current transmission and switch control.
5. **Power Factor Correction (PFC)**
- In power factor correction modules, this MOSFET can effectively reduce power consumption and improve system efficiency, optimize the power factor and improve the stability of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
