DTU11N65SJ-VB Product details
Product introduction:
DTU11N65SJ-VB is a high voltage N-channel MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high voltage switching applications. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 370mΩ at VGS=10V, and the maximum drain current (ID) reaches 11A. DTU11N65SJ-VB adopts SJ_Multi-EPI technology, which can provide excellent performance and reliability in high voltage and high current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type (Package): ** TO252
2. **Channel configuration (Configuration): ** Single N-Channel (Single N-Channel)
3. **Drain-source voltage (VDS): ** 650V
4. **Gate-source voltage (VGS): ** ±30V
5. **Throw-on voltage (Vth): ** 3.5V
6. **On-resistance (RDS(ON)): ** 370mΩ @ VGS=10V
7. **Maximum drain current (ID): ** 11A
8. **Technology (Technology): ** SJ_Multi-EPI
Domain and module applications:
The high voltage and high current characteristics of DTU11N65SJ-VB make it widely applicable in multiple application fields. Here are some specific application scenarios and module examples:
1. **High-voltage switching power supply:** Due to its drain-source voltage of up to 650V, DTU11N65SJ-VB is very suitable for use in high-voltage switching power supplies (SMPS) and DC-DC converters. In these applications, it can effectively handle high voltages, provide stable switching performance and low on-resistance, thereby improving overall power efficiency and reliability.
2. **Motor drive system:** In industrial motor drive systems, DTU11N65SJ-VB is able to handle high voltage and high current requirements, and is suitable for motor control, servo systems, and power conditioning circuits. The high current capability of this MOSFET can meet the needs of motor drive and ensure the efficient operation of the system.
3. **Home appliances and consumer electronics:** In some high-voltage home appliances, such as large home appliances and high-power power management systems, DTU11N65SJ-VB provides stable switching characteristics and high current handling capabilities to ensure the reliability and performance of the equipment under various working conditions.
4. **Lighting systems:** In high-power LED driving and other lighting applications, DTU11N65SJ-VB can effectively handle high voltage input and control current to ensure the stability and high efficiency of the lighting system, and is suitable for lighting driving occasions that require high voltage and high power.
The design and performance characteristics of DTU11N65SJ-VB enable it to perform well in the above applications, providing strong support for various electrical systems in high voltage and high current environments.
Technical support:
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