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DTU11N60SJ-VB Product details
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Product Introduction
DTU11N60SJ-VB is a high voltage power MOSFET manufactured using the advanced SJ (Super Junction) multi-epitaxial process. It has a drain-source voltage capability of 600V and a drain current capability of 11A, and adopts a TO252 package and a single N-channel design. This device is widely used in high voltage switching power supplies, industrial motor drives and other high power switching applications with its low on-resistance and high withstand voltage characteristics.
DTU11N60SJ-VB is a high voltage power MOSFET manufactured using the advanced SJ (Super Junction) multi-epitaxial process. It has a drain-source voltage capability of 600V and a drain current capability of 11A, and adopts a TO252 package and a single N-channel design. This device is widely used in high voltage switching power supplies, industrial motor drives and other high power switching applications with its low on-resistance and high withstand voltage characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: DTU11N60SJ-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
- **Model**: DTU11N60SJ-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
Domain and module applications：
Applications and Module Examples
1. **High Voltage Switching Power Supply (HV SMPS)**: DTU11N60SJ-VB performs well in high voltage switching power supplies, and its 600V drain-source voltage capability enables it to handle the switching operation of high voltage input power supplies. The lower on-resistance (380mΩ) helps reduce power loss and improve power conversion efficiency, making it suitable for use as the main switch in power modules.
2. **Industrial Motor Drive**: In industrial motor drive applications, the 11A drain current capability and high voltage tolerance of DTU11N60SJ-VB enable it to handle the high current and high voltage requirements in motor starting and operation. Its stable switching performance ensures the reliability and efficiency of the motor control system.
3. **Photovoltaic Inverter**: The 600V withstand voltage capability of this MOSFET makes it suitable for high voltage DC to AC conversion in photovoltaic inverters. Its low on-resistance can effectively reduce energy loss, improve the efficiency of the inverter and the overall performance of the photovoltaic system.
4. **Battery Management System (BMS)**: In the battery management system, DTU11N60SJ-VB can be used to control the charging and discharging process of the battery. Its high voltage resistance and high current handling capabilities can effectively manage the switching of the battery module, provide stable power management functions, and ensure the safety and reliability of the system.
In summary, DTU11N60SJ-VB is a power MOSFET with high voltage and high current handling capabilities, suitable for high-voltage switching power supplies, industrial motor drives, photovoltaic inverters, and battery management systems. Its low on-resistance and superior switching performance make it play an important role in these applications.
1. **High Voltage Switching Power Supply (HV SMPS)**: DTU11N60SJ-VB performs well in high voltage switching power supplies, and its 600V drain-source voltage capability enables it to handle the switching operation of high voltage input power supplies. The lower on-resistance (380mΩ) helps reduce power loss and improve power conversion efficiency, making it suitable for use as the main switch in power modules.
2. **Industrial Motor Drive**: In industrial motor drive applications, the 11A drain current capability and high voltage tolerance of DTU11N60SJ-VB enable it to handle the high current and high voltage requirements in motor starting and operation. Its stable switching performance ensures the reliability and efficiency of the motor control system.
3. **Photovoltaic Inverter**: The 600V withstand voltage capability of this MOSFET makes it suitable for high voltage DC to AC conversion in photovoltaic inverters. Its low on-resistance can effectively reduce energy loss, improve the efficiency of the inverter and the overall performance of the photovoltaic system.
4. **Battery Management System (BMS)**: In the battery management system, DTU11N60SJ-VB can be used to control the charging and discharging process of the battery. Its high voltage resistance and high current handling capabilities can effectively manage the switching of the battery module, provide stable power management functions, and ensure the safety and reliability of the system.
In summary, DTU11N60SJ-VB is a power MOSFET with high voltage and high current handling capabilities, suitable for high-voltage switching power supplies, industrial motor drives, photovoltaic inverters, and battery management systems. Its low on-resistance and superior switching performance make it play an important role in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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