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DTU10N65SJ-VB Product details
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1. DTU10N65SJ-VB Product Introduction
DTU10N65SJ-VB is a high voltage single N-channel power MOSFET that uses advanced Super Junction Multi-EPI technology. It is packaged in TO252 and provides high voltage and high current handling capabilities while maintaining low on-resistance. This MOSFET is designed for high-efficiency power conversion and switching applications, suitable for applications requiring high voltage and high current.
DTU10N65SJ-VB is a high voltage single N-channel power MOSFET that uses advanced Super Junction Multi-EPI technology. It is packaged in TO252 and provides high voltage and high current handling capabilities while maintaining low on-resistance. This MOSFET is designed for high-efficiency power conversion and switching applications, suitable for applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. DTU10N65SJ-VB Detailed parameter description
- **Model**: DTU10N65SJ-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Model**: DTU10N65SJ-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
III. DTU10N65SJ-VB Application Fields and Module Examples
1. **High Power Power Module**: DTU10N65SJ-VB is very suitable for high power power modules due to its high voltage and high current handling capabilities. It can work efficiently at high voltages and is suitable for switching power supplies and power conversion equipment.
2. **Solar Inverter**: In a solar inverter, DTU10N65SJ-VB can be used as a power switching component to process the high voltage DC from the solar panel and convert it into stable AC to supply the grid or load.
3. **Motor Drive System**: This MOSFET can be used in motor drive systems, especially in motor control applications that require high current and high voltage, and can provide stable current transmission and efficient switching performance.
4. **Industrial welding equipment**: In industrial welding equipment, DTU10N65SJ-VB can be used as a power switch to handle high voltage and high current requirements, ensuring high efficiency and stability during the welding process.
5. **High-voltage switching circuit**: This MOSFET is suitable for various high-voltage switching circuits, including high-voltage switching power supplies, power converters and other applications. Its high withstand voltage characteristics ensure reliable operation in high-voltage environments.
The high voltage withstand capability and low on-resistance of DTU10N65SJ-VB enable it to perform well in these high-power, high-voltage applications, ensuring the efficiency and reliability of the system.
1. **High Power Power Module**: DTU10N65SJ-VB is very suitable for high power power modules due to its high voltage and high current handling capabilities. It can work efficiently at high voltages and is suitable for switching power supplies and power conversion equipment.
2. **Solar Inverter**: In a solar inverter, DTU10N65SJ-VB can be used as a power switching component to process the high voltage DC from the solar panel and convert it into stable AC to supply the grid or load.
3. **Motor Drive System**: This MOSFET can be used in motor drive systems, especially in motor control applications that require high current and high voltage, and can provide stable current transmission and efficient switching performance.
4. **Industrial welding equipment**: In industrial welding equipment, DTU10N65SJ-VB can be used as a power switch to handle high voltage and high current requirements, ensuring high efficiency and stability during the welding process.
5. **High-voltage switching circuit**: This MOSFET is suitable for various high-voltage switching circuits, including high-voltage switching power supplies, power converters and other applications. Its high withstand voltage characteristics ensure reliable operation in high-voltage environments.
The high voltage withstand capability and low on-resistance of DTU10N65SJ-VB enable it to perform well in these high-power, high-voltage applications, ensuring the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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