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DTU10N60SJ-VB Product details
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1. Product Introduction
DTU10N60SJ-VB is a high-performance N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for use in high voltage environments. Its on-resistance (RDS(ON)) is 470mΩ, and it supports a continuous drain current (ID) of 10A at VGS=10V. The DTU10N60SJ-VB adopts super junction (SJ) and multi-epitaxy (Multi-EPI) technology, which is designed to provide low conduction loss and high efficiency, while enhancing the overall reliability and durability of the device.
DTU10N60SJ-VB is a high-performance N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for use in high voltage environments. Its on-resistance (RDS(ON)) is 470mΩ, and it supports a continuous drain current (ID) of 10A at VGS=10V. The DTU10N60SJ-VB adopts super junction (SJ) and multi-epitaxy (Multi-EPI) technology, which is designed to provide low conduction loss and high efficiency, while enhancing the overall reliability and durability of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 10A | 470mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 470mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Super junction (SJ) and multi-epitaxy (Multi-EPI)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 470mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Super junction (SJ) and multi-epitaxy (Multi-EPI)
Domain and module applications：
3. Application fields and modules
DTU10N60SJ-VB MOSFET is suitable for a variety of demanding application scenarios due to its high voltage and high current characteristics. The following are several typical application fields:
1. **High voltage switching power supply (HV-SMPS)**: DTU10N60SJ-VB can be used as a key switching element in the switching power supply. Its high voltage tolerance and low on-resistance make it suitable for high-efficiency power supply systems such as industrial power supply, communication power supply and LED driver power supply.
2. **Motor drive system**: In the motor drive module, this MOSFET can efficiently control the switching operation of the motor and is suitable for high-power motor control systems such as power tools, household appliances and industrial automation equipment to improve the efficiency and stability of the system.
3. **Inverter**: In solar and wind inverters, DTU10N60SJ-VB can perform efficient power conversion. Its high voltage characteristics and low conduction loss ensure the high efficiency and reliability of the inverter, making it an ideal choice for renewable energy systems.
4. **UPS System and Battery Management**: This MOSFET performs well in uninterruptible power supply (UPS) and battery management systems, and can stably control the power switch under high voltage conditions, ensuring the reliability and durability of the system in power outages.
DTU10N60SJ-VB MOSFET is suitable for a variety of demanding application scenarios due to its high voltage and high current characteristics. The following are several typical application fields:
1. **High voltage switching power supply (HV-SMPS)**: DTU10N60SJ-VB can be used as a key switching element in the switching power supply. Its high voltage tolerance and low on-resistance make it suitable for high-efficiency power supply systems such as industrial power supply, communication power supply and LED driver power supply.
2. **Motor drive system**: In the motor drive module, this MOSFET can efficiently control the switching operation of the motor and is suitable for high-power motor control systems such as power tools, household appliances and industrial automation equipment to improve the efficiency and stability of the system.
3. **Inverter**: In solar and wind inverters, DTU10N60SJ-VB can perform efficient power conversion. Its high voltage characteristics and low conduction loss ensure the high efficiency and reliability of the inverter, making it an ideal choice for renewable energy systems.
4. **UPS System and Battery Management**: This MOSFET performs well in uninterruptible power supply (UPS) and battery management systems, and can stably control the power switch under high voltage conditions, ensuring the reliability and durability of the system in power outages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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