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DTP7N80FSJ-VB Product details
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Product Introduction
DTP7N80FSJ-VB is a high voltage power MOSFET manufactured using an advanced SJ (Super Junction) multi-epitaxial process. It has a drain-source voltage capability of up to 800V and is suitable for a variety of high voltage applications. This device uses a TO220F package, a single N-channel design, has a low on-resistance and a high drain current capability, and is very suitable for applications that require high voltage handling and high power switching.
DTP7N80FSJ-VB is a high voltage power MOSFET manufactured using an advanced SJ (Super Junction) multi-epitaxial process. It has a drain-source voltage capability of up to 800V and is suitable for a variety of high voltage applications. This device uses a TO220F package, a single N-channel design, has a low on-resistance and a high drain current capability, and is very suitable for applications that require high voltage handling and high power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: DTP7N80FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
- **Model**: DTP7N80FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply (HV SMPS)**: DTP7N80FSJ-VB is suitable for high-voltage switching power supply. Its 800V drain-source voltage capability enables it to work stably in high-voltage power supply environment. Low on-resistance (770mΩ) improves the power conversion efficiency, reduces power loss, and ensures efficient operation of the power module.
2. **Industrial motor drive**: Due to its high voltage withstand capability of up to 800V and high drain current capability (7A), DTP7N80FSJ-VB is very suitable for high-voltage motor drive applications. In industrial control systems, it can effectively handle the start-up and operation process of high-power motors and provide stable and reliable control.
3. **Photovoltaic inverter**: In solar photovoltaic inverters, DTP7N80FSJ-VB can withstand voltages up to 800V and is suitable for high-voltage DC to AC conversion. Its low on-resistance can effectively reduce energy loss and improve the energy conversion efficiency and system reliability of the entire photovoltaic system.
4. **Uninterruptible Power Supply System (UPS)**: In the UPS system, DTP7N80FSJ-VB can be used as the main power switch to handle the high-voltage surge during power failure. Its high-voltage and high-current handling capabilities ensure the stability and reliability of the UPS system when providing backup power.
In general, DTP7N80FSJ-VB is a high-voltage, low on-resistance power MOSFET suitable for a variety of applications such as high-voltage switching power supplies, industrial motor drives, photovoltaic inverters and uninterruptible power supply systems. Its superior performance makes it an efficient and reliable choice in these fields.
1. **High-voltage switching power supply (HV SMPS)**: DTP7N80FSJ-VB is suitable for high-voltage switching power supply. Its 800V drain-source voltage capability enables it to work stably in high-voltage power supply environment. Low on-resistance (770mΩ) improves the power conversion efficiency, reduces power loss, and ensures efficient operation of the power module.
2. **Industrial motor drive**: Due to its high voltage withstand capability of up to 800V and high drain current capability (7A), DTP7N80FSJ-VB is very suitable for high-voltage motor drive applications. In industrial control systems, it can effectively handle the start-up and operation process of high-power motors and provide stable and reliable control.
3. **Photovoltaic inverter**: In solar photovoltaic inverters, DTP7N80FSJ-VB can withstand voltages up to 800V and is suitable for high-voltage DC to AC conversion. Its low on-resistance can effectively reduce energy loss and improve the energy conversion efficiency and system reliability of the entire photovoltaic system.
4. **Uninterruptible Power Supply System (UPS)**: In the UPS system, DTP7N80FSJ-VB can be used as the main power switch to handle the high-voltage surge during power failure. Its high-voltage and high-current handling capabilities ensure the stability and reliability of the UPS system when providing backup power.
In general, DTP7N80FSJ-VB is a high-voltage, low on-resistance power MOSFET suitable for a variety of applications such as high-voltage switching power supplies, industrial motor drives, photovoltaic inverters and uninterruptible power supply systems. Its superior performance makes it an efficient and reliable choice in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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