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DTP7N70FSJ-VB Product details
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1. Product Introduction
DTP7N70FSJ-VB is a high-performance N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. The MOSFET supports drain-source voltage (VDS) up to 700V and gate-source voltage (VGS) of ±30V, suitable for use in harsh environments. Its on-resistance (RDS(ON)) is 750mΩ, and it can carry up to 7A of continuous drain current (ID) at VGS=10V. The DTP7N70FSJ-VB uses advanced super junction (SJ) and multi-epitaxy (Multi-EPI) technologies to reduce conduction losses and improve the overall efficiency and reliability of the device.
DTP7N70FSJ-VB is a high-performance N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. The MOSFET supports drain-source voltage (VDS) up to 700V and gate-source voltage (VGS) of ±30V, suitable for use in harsh environments. Its on-resistance (RDS(ON)) is 750mΩ, and it can carry up to 7A of continuous drain current (ID) at VGS=10V. The DTP7N70FSJ-VB uses advanced super junction (SJ) and multi-epitaxy (Multi-EPI) technologies to reduce conduction losses and improve the overall efficiency and reliability of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Continuous drain current (ID)**: 7A
- **Technology**: Super junction (SJ) and multi-layer epitaxy (Multi-EPI)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Continuous drain current (ID)**: 7A
- **Technology**: Super junction (SJ) and multi-layer epitaxy (Multi-EPI)
Domain and module applications：
3. Application fields and modules
DTP7N70FSJ-VB MOSFET is widely used in electronic devices that require high voltage and high current processing. The following are several typical application fields:
1. **High-voltage switching power supply (HV-SMPS)**: In the high-voltage switching power supply, DTP7N70FSJ-VB is used as the main switching device. Its high voltage tolerance and relatively low on-resistance make it very suitable for applications that require high efficiency and reliability, such as power management systems, industrial power supplies, and communication power supplies.
2. **Motor drive system**: In the motor drive system, especially the control of high-power motors, DTP7N70FSJ-VB can stably control the operation of the motor. Its high current carrying capacity and excellent conduction performance help improve the efficiency and performance of the motor.
3. **Inverter**: Used in renewable energy systems such as solar inverters and wind inverters, the high voltage characteristics and low conduction loss of DTP7N70FSJ-VB ensure high efficiency and long-term stability of the system, and is suitable for processing high-voltage DC to AC conversion.
4. **UPS system and battery management**: In uninterruptible power supply (UPS) and battery management systems, this MOSFET can be used to efficiently control the power switch, ensuring that the system works stably under high load and high voltage conditions, and improving the overall reliability and durability of the system.
DTP7N70FSJ-VB MOSFET is widely used in electronic devices that require high voltage and high current processing. The following are several typical application fields:
1. **High-voltage switching power supply (HV-SMPS)**: In the high-voltage switching power supply, DTP7N70FSJ-VB is used as the main switching device. Its high voltage tolerance and relatively low on-resistance make it very suitable for applications that require high efficiency and reliability, such as power management systems, industrial power supplies, and communication power supplies.
2. **Motor drive system**: In the motor drive system, especially the control of high-power motors, DTP7N70FSJ-VB can stably control the operation of the motor. Its high current carrying capacity and excellent conduction performance help improve the efficiency and performance of the motor.
3. **Inverter**: Used in renewable energy systems such as solar inverters and wind inverters, the high voltage characteristics and low conduction loss of DTP7N70FSJ-VB ensure high efficiency and long-term stability of the system, and is suitable for processing high-voltage DC to AC conversion.
4. **UPS system and battery management**: In uninterruptible power supply (UPS) and battery management systems, this MOSFET can be used to efficiently control the power switch, ensuring that the system works stably under high load and high voltage conditions, and improving the overall reliability and durability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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