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DTP7N65FSJ-VB Product details
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Product Introduction
**DTP7N65FSJ-VB** is a high voltage, low on-resistance N-Channel MOSFET in TO220F package. It adopts SJ_Multi-EPI technology and is suitable for applications that require high voltage and high current handling. Its main features include higher drain-source voltage (VDS) and lower RDS(ON), which makes it perform well in various high voltage switching applications.
**DTP7N65FSJ-VB** is a high voltage, low on-resistance N-Channel MOSFET in TO220F package. It adopts SJ_Multi-EPI technology and is suitable for applications that require high voltage and high current handling. Its main features include higher drain-source voltage (VDS) and lower RDS(ON), which makes it perform well in various high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: DTP7N65FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: DTP7N65FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
**DTP7N65FSJ-VB** is mainly used in the following fields and modules:
1. **Power switch**: Due to its high drain-source voltage and low on-resistance, the DTP7N65FSJ-VB is very suitable for use as the main switch in switching power supplies. This can be found in industrial power supplies, battery management systems, and power modules for consumer electronics.
2. **Inverter**: In solar inverters or power inverters, this MOSFET can be used to achieve efficient high-voltage switching, helping to optimize power conversion efficiency and improve overall system performance.
3. **Motor drive**: In applications used to drive electric motors, the DTP7N65FSJ-VB can be used as a switching element in the motor control circuit to ensure stable operation of the motor and provide efficient energy conversion.
4. **Power conversion equipment**: In equipment such as transformers and inverters, this MOSFET can be used for high-voltage, high-power switching control to improve system reliability and stability.
5. **Lighting Control**: In high-voltage lighting systems, the DTP7N65FSJ-VB can provide reliable switching functions, especially in situations where high-voltage loads need to be controlled, such as high-power lamps or lighting control systems.
**DTP7N65FSJ-VB** is mainly used in the following fields and modules:
1. **Power switch**: Due to its high drain-source voltage and low on-resistance, the DTP7N65FSJ-VB is very suitable for use as the main switch in switching power supplies. This can be found in industrial power supplies, battery management systems, and power modules for consumer electronics.
2. **Inverter**: In solar inverters or power inverters, this MOSFET can be used to achieve efficient high-voltage switching, helping to optimize power conversion efficiency and improve overall system performance.
3. **Motor drive**: In applications used to drive electric motors, the DTP7N65FSJ-VB can be used as a switching element in the motor control circuit to ensure stable operation of the motor and provide efficient energy conversion.
4. **Power conversion equipment**: In equipment such as transformers and inverters, this MOSFET can be used for high-voltage, high-power switching control to improve system reliability and stability.
5. **Lighting Control**: In high-voltage lighting systems, the DTP7N65FSJ-VB can provide reliable switching functions, especially in situations where high-voltage loads need to be controlled, such as high-power lamps or lighting control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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