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DTP7N50FSJ-VB Product details
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1. DTP7N50FSJ-VB Product Introduction
DTP7N50FSJ-VB is a single-channel N-type MOSFET in TO220F package. The device has a drain-source breakdown voltage (VDS) of 500V and can withstand a gate-source voltage (VGS) of ±30V. The MOSFET is manufactured using Super Junction (SJ) multi-epitaxial (Multi-EPI) technology and has low on-resistance and high current capability. Its on-resistance (RDS(ON)) is 550mΩ at a gate drive voltage of 10V and a drain current (ID) of 7A. This product is suitable for high-voltage applications, has efficient switching characteristics and low power consumption, and is suitable for use in various power management and converters.
DTP7N50FSJ-VB is a single-channel N-type MOSFET in TO220F package. The device has a drain-source breakdown voltage (VDS) of 500V and can withstand a gate-source voltage (VGS) of ±30V. The MOSFET is manufactured using Super Junction (SJ) multi-epitaxial (Multi-EPI) technology and has low on-resistance and high current capability. Its on-resistance (RDS(ON)) is 550mΩ at a gate drive voltage of 10V and a drain current (ID) of 7A. This product is suitable for high-voltage applications, has efficient switching characteristics and low power consumption, and is suitable for use in various power management and converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 7A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of DTP7N50FSJ-VB
1. **Package type**: TO220F
- TO220F is a plastic-encapsulated through-hole package with good heat dissipation performance.
2. **Channel configuration**: Single-channel N-type
- Contains only one N-type MOSFET channel, suitable for single-channel high-voltage control.
3. **Drain-source breakdown voltage (VDS)**: 500V
- Indicates that the maximum voltage that the MOSFET can withstand between the drain and the source is 500V when the gate drive voltage is 0V.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that the gate can withstand is ±30V, which provides a margin for overvoltage protection.
5. **Threshold Voltage (Vth)**: 3.5V
- This is the minimum gate-source voltage for the MOSFET to go from the off state to the on state.
6. **On-resistance (RDS(ON))**: 550mΩ @ VGS = 10V
- The drain-source on-resistance is 550mΩ at a gate drive voltage of 10V, reflecting low loss characteristics.
7. **Drain Current (ID)**: 7A
- Under specified conditions (such as good heat dissipation), the maximum continuous drain current that the MOSFET can handle is 7A.
8. **Technology Type**: SJ_Multi-EPI
- Super junction multi-epitaxial technology, providing higher voltage blocking capability and lower conduction losses, suitable for high-performance applications.
1. **Package type**: TO220F
- TO220F is a plastic-encapsulated through-hole package with good heat dissipation performance.
2. **Channel configuration**: Single-channel N-type
- Contains only one N-type MOSFET channel, suitable for single-channel high-voltage control.
3. **Drain-source breakdown voltage (VDS)**: 500V
- Indicates that the maximum voltage that the MOSFET can withstand between the drain and the source is 500V when the gate drive voltage is 0V.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that the gate can withstand is ±30V, which provides a margin for overvoltage protection.
5. **Threshold Voltage (Vth)**: 3.5V
- This is the minimum gate-source voltage for the MOSFET to go from the off state to the on state.
6. **On-resistance (RDS(ON))**: 550mΩ @ VGS = 10V
- The drain-source on-resistance is 550mΩ at a gate drive voltage of 10V, reflecting low loss characteristics.
7. **Drain Current (ID)**: 7A
- Under specified conditions (such as good heat dissipation), the maximum continuous drain current that the MOSFET can handle is 7A.
8. **Technology Type**: SJ_Multi-EPI
- Super junction multi-epitaxial technology, providing higher voltage blocking capability and lower conduction losses, suitable for high-performance applications.
Domain and module applications：
III. Application fields and modules of DTP7N50FSJ-VB
1. **Power management**
- DTP7N50FSJ-VB is very suitable for high-voltage power management systems, such as AC-DC converters and DC-DC converters. In these systems, the device can effectively reduce conduction loss and switching loss, and improve the efficiency of the system.
2. **Motor drive**
- This MOSFET is suitable for medium and high power motor drives, especially in the field of industrial automation, and can provide efficient current control for the switching operation of the motor.
3. **Lighting control**
- In LED lighting systems, DTP7N50FSJ-VB can be used for switching power drivers to ensure stable and efficient power conversion.
4. **High-voltage switch**
- Due to its high VDS of 500V and good switching performance, this MOSFET can be used in various high-voltage switch modules, such as UPS systems and inverters, to provide reliable power switching functions.
5. **Power Factor Correction (PFC)**
- In a power factor correction module, the DTP7N50FSJ-VB can be used as the main switching device to improve the overall power factor by reducing power consumption and increasing system efficiency.
1. **Power management**
- DTP7N50FSJ-VB is very suitable for high-voltage power management systems, such as AC-DC converters and DC-DC converters. In these systems, the device can effectively reduce conduction loss and switching loss, and improve the efficiency of the system.
2. **Motor drive**
- This MOSFET is suitable for medium and high power motor drives, especially in the field of industrial automation, and can provide efficient current control for the switching operation of the motor.
3. **Lighting control**
- In LED lighting systems, DTP7N50FSJ-VB can be used for switching power drivers to ensure stable and efficient power conversion.
4. **High-voltage switch**
- Due to its high VDS of 500V and good switching performance, this MOSFET can be used in various high-voltage switch modules, such as UPS systems and inverters, to provide reliable power switching functions.
5. **Power Factor Correction (PFC)**
- In a power factor correction module, the DTP7N50FSJ-VB can be used as the main switching device to improve the overall power factor by reducing power consumption and increasing system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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