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DTP5N65FSJ-VB Product details
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Product Introduction
DTP5N65FSJ-VB is a high-voltage power MOSFET manufactured by advanced SJ (Super Junction) multi-epitaxial process. The device adopts TO220F package, single N-channel design, high drain-source voltage (VDS) and low on-resistance (RDS(ON)), making it perform well in switching power supply and high-voltage drive applications.
DTP5N65FSJ-VB is a high-voltage power MOSFET manufactured by advanced SJ (Super Junction) multi-epitaxial process. The device adopts TO220F package, single N-channel design, high drain-source voltage (VDS) and low on-resistance (RDS(ON)), making it perform well in switching power supply and high-voltage drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: DTP5N65FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
- **Model**: DTP5N65FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Super Junction multi-epitaxial process)
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: DTP5N65FSJ-VB can be used as the main power switch in the switching power supply. Its high drain-source voltage (650V) and low on-resistance (1000mΩ) enable it to handle switching operations in high-voltage circuits, improving the conversion efficiency of the power supply.
2. **High-voltage Motor Drive**: The 650V drain-source voltage capability of this MOSFET makes it very suitable for high-voltage motor drive modules, especially in industrial control systems, where it can withstand the high-voltage pulses at the moment of motor startup.
3. **Battery Management System (BMS)**: In the battery management module in electric vehicles and energy storage systems, DTP5N65FSJ-VB can be used to control the charging and discharging process. With its high voltage and robust switching characteristics, it helps to improve the safety and efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: This device is also suitable for uninterruptible power supply systems, as a key switching device in the inverter part, providing stable power output through efficient power conversion.
In summary, the high-voltage performance and low on-resistance of the DTP5N65FSJ-VB make it an ideal choice for a variety of high-voltage applications, from switching power supplies to motor drives, to battery management and uninterruptible power supply systems.
1. **Switching Power Supply (SMPS)**: DTP5N65FSJ-VB can be used as the main power switch in the switching power supply. Its high drain-source voltage (650V) and low on-resistance (1000mΩ) enable it to handle switching operations in high-voltage circuits, improving the conversion efficiency of the power supply.
2. **High-voltage Motor Drive**: The 650V drain-source voltage capability of this MOSFET makes it very suitable for high-voltage motor drive modules, especially in industrial control systems, where it can withstand the high-voltage pulses at the moment of motor startup.
3. **Battery Management System (BMS)**: In the battery management module in electric vehicles and energy storage systems, DTP5N65FSJ-VB can be used to control the charging and discharging process. With its high voltage and robust switching characteristics, it helps to improve the safety and efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: This device is also suitable for uninterruptible power supply systems, as a key switching device in the inverter part, providing stable power output through efficient power conversion.
In summary, the high-voltage performance and low on-resistance of the DTP5N65FSJ-VB make it an ideal choice for a variety of high-voltage applications, from switching power supplies to motor drives, to battery management and uninterruptible power supply systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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