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DTP5N60FSJ-VB Product details
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1. Product Introduction
DTP5N60FSJ-VB is a high-performance N-channel power MOSFET in TO220F package, designed for high-voltage applications. With a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, this MOSFET can operate stably in a high-voltage environment. Its on-resistance (RDS(ON)) is 850mΩ, and it can support a continuous drain current (ID) of 5A at VGS=10V. The device uses super junction (SJ) and multi-epitaxy (Multi-EPI) technology, which gives it lower conduction losses and higher reliability in high-voltage applications.
DTP5N60FSJ-VB is a high-performance N-channel power MOSFET in TO220F package, designed for high-voltage applications. With a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, this MOSFET can operate stably in a high-voltage environment. Its on-resistance (RDS(ON)) is 850mΩ, and it can support a continuous drain current (ID) of 5A at VGS=10V. The device uses super junction (SJ) and multi-epitaxy (Multi-EPI) technology, which gives it lower conduction losses and higher reliability in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 5A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology**: Super junction (SJ) and multi-epitaxy (Multi-EPI)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology**: Super junction (SJ) and multi-epitaxy (Multi-EPI)
Domain and module applications：
3. Application fields and modules
DTP5N60FSJ-VB MOSFET is widely used in situations requiring high voltage and high efficiency power conversion. The following are several typical application fields:
1. **Switching power supply (SMPS)**: In the switching power supply, DTP5N60FSJ-VB MOSFET can be used for the main switching device. Due to its high voltage tolerance and low conduction loss, the power supply can operate efficiently and is suitable for LED driver power supply, charger and other fields.
2. **Inverter**: In the inverter circuit, this MOSFET can be used as the main power switching element. Its high voltage and low loss characteristics make it very suitable for high voltage inverter applications such as solar inverters and battery management systems.
3. **Motor driver**: In the motor drive module of industrial and household appliances, the high voltage characteristics of DTP5N60FSJ-VB enable it to control high-power motors, effectively improve system efficiency and reduce heat generation.
4. **Power Management Module**: In power management modules that require precise control and efficient power transmission, this MOSFET can ensure high reliability and long life, and is suitable for various industrial automation equipment and power control systems.
DTP5N60FSJ-VB MOSFET is widely used in situations requiring high voltage and high efficiency power conversion. The following are several typical application fields:
1. **Switching power supply (SMPS)**: In the switching power supply, DTP5N60FSJ-VB MOSFET can be used for the main switching device. Due to its high voltage tolerance and low conduction loss, the power supply can operate efficiently and is suitable for LED driver power supply, charger and other fields.
2. **Inverter**: In the inverter circuit, this MOSFET can be used as the main power switching element. Its high voltage and low loss characteristics make it very suitable for high voltage inverter applications such as solar inverters and battery management systems.
3. **Motor driver**: In the motor drive module of industrial and household appliances, the high voltage characteristics of DTP5N60FSJ-VB enable it to control high-power motors, effectively improve system efficiency and reduce heat generation.
4. **Power Management Module**: In power management modules that require precise control and efficient power transmission, this MOSFET can ensure high reliability and long life, and is suitable for various industrial automation equipment and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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