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DTP2N65FSJ-VB Product details
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DTP2N65FSJ-VB MOSFET Product Introduction
DTP2N65FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage applications. It supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V. This MOSFET adopts SJ_Multi-EPI technology and has excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.3V, the maximum on-resistance (RDS(ON)) is 2300mΩ at VGS=10V, and the maximum drain current (ID) is 2A. DTP2N65FSJ-VB is suitable for switching control in high voltage environments, especially in low power applications.
DTP2N65FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage applications. It supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V. This MOSFET adopts SJ_Multi-EPI technology and has excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.3V, the maximum on-resistance (RDS(ON)) is 2300mΩ at VGS=10V, and the maximum drain current (ID) is 2A. DTP2N65FSJ-VB is suitable for switching control in high voltage environments, especially in low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.3V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.3V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.3V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- TO220F package provides excellent heat dissipation performance, suitable for medium power applications, with good mechanical strength and electrical performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, providing stable switching characteristics and excellent electrical performance.
- **Drain-source voltage (VDS)**: 650V
- The maximum voltage that this MOSFET can withstand is 650V, suitable for high voltage circuit design requirements.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage of the gate is ±30V, which adapts to a wide range of driving voltage requirements.
- **Threshold voltage (Vth)**: 3.3V
- Starts to conduct when VGS=3.3V, suitable for applications with high voltage control signals.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 2300mΩ
- Higher on-resistance is suitable for lower power applications and may result in higher power loss during switching.
- **Drain current (ID)**: 2A
- Maximum drain current is 2A, suitable for switching control of low power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves the voltage withstand capability of the MOSFET and optimizes the switching performance for high voltage applications.
- **Package type**: TO220F
- TO220F package provides excellent heat dissipation performance, suitable for medium power applications, with good mechanical strength and electrical performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, providing stable switching characteristics and excellent electrical performance.
- **Drain-source voltage (VDS)**: 650V
- The maximum voltage that this MOSFET can withstand is 650V, suitable for high voltage circuit design requirements.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage of the gate is ±30V, which adapts to a wide range of driving voltage requirements.
- **Threshold voltage (Vth)**: 3.3V
- Starts to conduct when VGS=3.3V, suitable for applications with high voltage control signals.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 2300mΩ
- Higher on-resistance is suitable for lower power applications and may result in higher power loss during switching.
- **Drain current (ID)**: 2A
- Maximum drain current is 2A, suitable for switching control of low power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves the voltage withstand capability of the MOSFET and optimizes the switching performance for high voltage applications.
Domain and module applications：
Applicable fields and module applications
DTP2N65FSJ-VB MOSFET is suitable for application scenarios that require high voltage but relatively low power requirements due to its high voltage characteristics. It is commonly used in high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits in the field of power electronics to provide stable power management functions. In these applications, it can effectively handle switching operations under high voltage conditions, and performs well under low power conditions despite its high on-resistance.
In industrial automation systems, DTP2N65FSJ-VB can be used to control low-power motors and power amplifiers, suitable for scenarios that require high voltage but low current. In high voltage inverters and power converters, this MOSFET can be used as a high voltage switching element to support the stable operation of the system.
In the field of automotive electronics, although the maximum drain current of this MOSFET is 2A, it is still suitable for high voltage control systems and low power battery management systems in electric vehicles, and can effectively handle high voltage switching requirements. Its high voltage tolerance gives it certain application potential in the high voltage environment of electric vehicles.
In general, DTP2N65FSJ-VB is a MOSFET suitable for high voltage but low power requirements, and is widely used in power management, power electronics, industrial automation, and automotive electronics.
DTP2N65FSJ-VB MOSFET is suitable for application scenarios that require high voltage but relatively low power requirements due to its high voltage characteristics. It is commonly used in high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits in the field of power electronics to provide stable power management functions. In these applications, it can effectively handle switching operations under high voltage conditions, and performs well under low power conditions despite its high on-resistance.
In industrial automation systems, DTP2N65FSJ-VB can be used to control low-power motors and power amplifiers, suitable for scenarios that require high voltage but low current. In high voltage inverters and power converters, this MOSFET can be used as a high voltage switching element to support the stable operation of the system.
In the field of automotive electronics, although the maximum drain current of this MOSFET is 2A, it is still suitable for high voltage control systems and low power battery management systems in electric vehicles, and can effectively handle high voltage switching requirements. Its high voltage tolerance gives it certain application potential in the high voltage environment of electric vehicles.
In general, DTP2N65FSJ-VB is a MOSFET suitable for high voltage but low power requirements, and is widely used in power management, power electronics, industrial automation, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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