DTP2N60FSJ-VB Product details
Product introduction:
DTP2N60FSJ-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage and low current applications. It can withstand drain-source voltage (VDS) up to 600V, suitable for handling switching and power management tasks in high voltage environments. This MOSFET uses SJ_Multi-EPI technology, which improves the electrical performance and reliability of the MOSFET. The DTP2N60FSJ-VB has a threshold voltage (Vth) of 3.3V, an on-resistance (RDS(ON)) of 2300mΩ (at VGS = 10V), and supports a drain current (ID) of up to 2A. This feature makes the DTP2N60FSJ-VB suitable for switch control and protection circuits in high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.3V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.3V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.3V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
**1. High-voltage switch **
DTP2N60FSJ-VB performs well in high-voltage switching applications, such as in high-voltage switching power supplies and battery protection circuits. Its 600V drain-source voltage allows it to switch safely in high-voltage environments, while its high on-resistance is suitable for applications that are not extremely demanding on power loss.
**2. Power management **
In power management systems, such as high-voltage power modules and switching power supplies, DTP2N60FSJ-VB can be used as a switching element to handle the control and protection of high-voltage power supplies. Its high voltage tolerance ensures stability and safety in power modules.
**3. Inverter **
This MOSFET is suitable for inverter applications, especially in inverter systems that need to handle high voltages. Although its current carrying capacity is low, it can effectively perform high-voltage power conversion and switching control in high-voltage inverters.
**4. Protection circuits**
In various high-voltage protection circuits, DTP2N60FSJ-VB can be used as a key component for overvoltage protection and switch control. Its high voltage tolerance enables it to effectively protect circuits from overvoltage damage.
**5. Lighting control**
In high-voltage lighting systems, such as high-voltage xenon lamp control, DTP2N60FSJ-VB can withstand high-voltage operations and provide reliable switch control. Although its on-resistance is high, it is sufficient to handle high-voltage operation requirements in high-voltage lighting applications.
With its high voltage handling capability and stable switching performance, DTP2N60FSJ-VB is suitable for switching and protection applications in various high-voltage scenarios, providing a reliable solution for the system.
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