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DTP2N60FSJ-VB Product details

Product introduction:

1. DTP2N60FSJ-VB Product Introduction

DTP2N60FSJ-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage and low current applications. It can withstand drain-source voltage (VDS) up to 600V, suitable for handling switching and power management tasks in high voltage environments. This MOSFET uses SJ_Multi-EPI technology, which improves the electrical performance and reliability of the MOSFET. The DTP2N60FSJ-VB has a threshold voltage (Vth) of 3.3V, an on-resistance (RDS(ON)) of 2300mΩ (at VGS = 10V), and supports a drain current (ID) of up to 2A. This feature makes the DTP2N60FSJ-VB suitable for switch control and protection circuits in high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 3.3V 2A 2300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 600V 3.3V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 600V 3.3V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. DTP2N60FSJ-VB Detailed parameter description

- **Package type**: TO220F
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 2300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI technology

Domain and module applications:

3. Application fields and module examples

**1. High-voltage switch **
DTP2N60FSJ-VB performs well in high-voltage switching applications, such as in high-voltage switching power supplies and battery protection circuits. Its 600V drain-source voltage allows it to switch safely in high-voltage environments, while its high on-resistance is suitable for applications that are not extremely demanding on power loss.

**2. Power management **
In power management systems, such as high-voltage power modules and switching power supplies, DTP2N60FSJ-VB can be used as a switching element to handle the control and protection of high-voltage power supplies. Its high voltage tolerance ensures stability and safety in power modules.

**3. Inverter **
This MOSFET is suitable for inverter applications, especially in inverter systems that need to handle high voltages. Although its current carrying capacity is low, it can effectively perform high-voltage power conversion and switching control in high-voltage inverters.

**4. Protection circuits**
In various high-voltage protection circuits, DTP2N60FSJ-VB can be used as a key component for overvoltage protection and switch control. Its high voltage tolerance enables it to effectively protect circuits from overvoltage damage.

**5. Lighting control**
In high-voltage lighting systems, such as high-voltage xenon lamp control, DTP2N60FSJ-VB can withstand high-voltage operations and provide reliable switch control. Although its on-resistance is high, it is sufficient to handle high-voltage operation requirements in high-voltage lighting applications.

With its high voltage handling capability and stable switching performance, DTP2N60FSJ-VB is suitable for switching and protection applications in various high-voltage scenarios, providing a reliable solution for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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