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DTP20N80FSJ-VB Product details
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Product Introduction
DTP20N80FSJ-VB is a high-voltage N-channel MOSFET in a TO220F package designed for high voltage and high current applications. It utilizes SJ_Multi-EPI technology to provide a drain-source voltage (VDS) of up to 800V, enabling it to operate reliably under extremely high voltage conditions. The MOSFET supports a maximum drain current (ID) of 20A, has a threshold voltage (Vth) of 3.5V, and an on-resistance (RDS(ON)) of 205mΩ at a gate-source voltage (VGS) of 10V. These features enable it to excel in high power and high voltage environments.
DTP20N80FSJ-VB is a high-voltage N-channel MOSFET in a TO220F package designed for high voltage and high current applications. It utilizes SJ_Multi-EPI technology to provide a drain-source voltage (VDS) of up to 800V, enabling it to operate reliably under extremely high voltage conditions. The MOSFET supports a maximum drain current (ID) of 20A, has a threshold voltage (Vth) of 3.5V, and an on-resistance (RDS(ON)) of 205mΩ at a gate-source voltage (VGS) of 10V. These features enable it to excel in high power and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: DTP20N80FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: DTP20N80FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
The high voltage and high current capabilities of the DTP20N80FSJ-VB make it suitable for a variety of fields and modules, especially those that need to handle high voltage and high power. Here are some specific application areas:
1. **High voltage power converter**: The DTP20N80FSJ-VB can be used in high voltage power converters as a switching element to convert high voltage DC to lower voltage DC. Its 800V drain-source voltage capability and relatively low on-resistance ensure efficient power conversion, suitable for industrial power supplies, high power adapters, and other high voltage power systems.
2. **Power inverter**: In power inverters, this MOSFET is used to convert DC to AC. Its high voltage handling capability and high current capability make it suitable for photovoltaic power generation systems, wind power generation systems, and other inverter applications that require high voltage and high current handling.
3. **High-voltage switching circuits**: The DTP20N80FSJ-VB is suitable for high-voltage switching circuits, such as high-voltage load switches and power distribution systems. In these applications, this MOSFET can effectively control and switch high-voltage loads, ensuring the safety and stability of the system.
4. **High-voltage motor drive systems**: In high-voltage motor drive systems, such as industrial motor drives and high-voltage power tools, this MOSFET provides reliable switching performance, suitable for high-voltage motor control and drive circuits, ensuring stable operation of the motor.
These applications demonstrate the superior performance of the DTP20N80FSJ-VB in high-voltage and high-power environments, making it an indispensable component in many high-voltage electronic devices and power management systems.
The high voltage and high current capabilities of the DTP20N80FSJ-VB make it suitable for a variety of fields and modules, especially those that need to handle high voltage and high power. Here are some specific application areas:
1. **High voltage power converter**: The DTP20N80FSJ-VB can be used in high voltage power converters as a switching element to convert high voltage DC to lower voltage DC. Its 800V drain-source voltage capability and relatively low on-resistance ensure efficient power conversion, suitable for industrial power supplies, high power adapters, and other high voltage power systems.
2. **Power inverter**: In power inverters, this MOSFET is used to convert DC to AC. Its high voltage handling capability and high current capability make it suitable for photovoltaic power generation systems, wind power generation systems, and other inverter applications that require high voltage and high current handling.
3. **High-voltage switching circuits**: The DTP20N80FSJ-VB is suitable for high-voltage switching circuits, such as high-voltage load switches and power distribution systems. In these applications, this MOSFET can effectively control and switch high-voltage loads, ensuring the safety and stability of the system.
4. **High-voltage motor drive systems**: In high-voltage motor drive systems, such as industrial motor drives and high-voltage power tools, this MOSFET provides reliable switching performance, suitable for high-voltage motor control and drive circuits, ensuring stable operation of the motor.
These applications demonstrate the superior performance of the DTP20N80FSJ-VB in high-voltage and high-power environments, making it an indispensable component in many high-voltage electronic devices and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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