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DTP20N60FSJ-VB Product details
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DTP20N60FSJ-VB MOSFET Product Introduction
DTP20N60FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and high current applications. It supports drain-source voltage (VDS) up to 600V and gate-source voltage (VGS) of ±30V. It adopts SJ_Multi-EPI technology, which enhances the voltage tolerance and switching performance of MOSFET. The threshold voltage (Vth) of DTP20N60FSJ-VB is 3.5V, the maximum on-resistance (RDS(ON)) is 150mΩ at VGS=10V, and the maximum drain current (ID) is 20A. This makes this MOSFET perform particularly well in applications requiring high voltage and high current.
DTP20N60FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and high current applications. It supports drain-source voltage (VDS) up to 600V and gate-source voltage (VGS) of ±30V. It adopts SJ_Multi-EPI technology, which enhances the voltage tolerance and switching performance of MOSFET. The threshold voltage (Vth) of DTP20N60FSJ-VB is 3.5V, the maximum on-resistance (RDS(ON)) is 150mΩ at VGS=10V, and the maximum drain current (ID) is 20A. This makes this MOSFET perform particularly well in applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | 150mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- TO220F package design is suitable for high power applications, with excellent heat dissipation and mechanical strength, capable of handling large power loads.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, providing stable switching characteristics and excellent electrical performance.
- **Drain-source voltage (VDS)**: 600V
- The maximum voltage that this MOSFET can withstand is 600V, suitable for the design requirements of high voltage circuits.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage of the gate is ±30V, which adapts to a wide range of driving voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signals.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 150mΩ
- Lower on-resistance can effectively reduce power loss in high voltage applications.
- **Drain current (ID)**: 20A
- Maximum drain current is 20A, suitable for switching control of high current loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves the voltage withstand capability of MOSFET and optimizes the switching performance for high voltage applications.
- **Package type**: TO220F
- TO220F package design is suitable for high power applications, with excellent heat dissipation and mechanical strength, capable of handling large power loads.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, providing stable switching characteristics and excellent electrical performance.
- **Drain-source voltage (VDS)**: 600V
- The maximum voltage that this MOSFET can withstand is 600V, suitable for the design requirements of high voltage circuits.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage of the gate is ±30V, which adapts to a wide range of driving voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signals.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 150mΩ
- Lower on-resistance can effectively reduce power loss in high voltage applications.
- **Drain current (ID)**: 20A
- Maximum drain current is 20A, suitable for switching control of high current loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves the voltage withstand capability of MOSFET and optimizes the switching performance for high voltage applications.
Domain and module applications：
Applicable fields and module applications
The high voltage and high current characteristics of the DTP20N60FSJ-VB MOSFET enable it to perform well in multiple fields. It is widely used in power electronics, such as high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits. These applications require efficient power management and stable switching performance, and the DTP20N60FSJ-VB can provide a reliable solution.
In industrial automation systems, this MOSFET can be used in motor drivers and power amplifiers to ensure reliable operation under high voltage and high current conditions. Its high current handling capability makes it suitable for power-intensive application scenarios.
In renewable energy systems, such as solar inverters and wind power converters, the DTP20N60FSJ-VB is an ideal switching element that can improve energy conversion efficiency under high voltage and high power conditions and ensure system stability. In the field of automotive electronics, this MOSFET can also be used in battery management systems for electric vehicles, providing efficient power switching and protection functions to support the safe management of high-voltage batteries.
In summary, DTP20N60FSJ-VB is a MOSFET suitable for high voltage and high current applications, and is widely used in power management, industrial automation, power electronics systems and renewable energy fields.
The high voltage and high current characteristics of the DTP20N60FSJ-VB MOSFET enable it to perform well in multiple fields. It is widely used in power electronics, such as high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits. These applications require efficient power management and stable switching performance, and the DTP20N60FSJ-VB can provide a reliable solution.
In industrial automation systems, this MOSFET can be used in motor drivers and power amplifiers to ensure reliable operation under high voltage and high current conditions. Its high current handling capability makes it suitable for power-intensive application scenarios.
In renewable energy systems, such as solar inverters and wind power converters, the DTP20N60FSJ-VB is an ideal switching element that can improve energy conversion efficiency under high voltage and high power conditions and ensure system stability. In the field of automotive electronics, this MOSFET can also be used in battery management systems for electric vehicles, providing efficient power switching and protection functions to support the safe management of high-voltage batteries.
In summary, DTP20N60FSJ-VB is a MOSFET suitable for high voltage and high current applications, and is widely used in power management, industrial automation, power electronics systems and renewable energy fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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