Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
15A |
|
|
280mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
15A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
15A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO-220
- Suitable for high power applications, provides good heat dissipation performance, and supports large current handling.
2. **Configuration**: Single N-channel
- Suitable for circuit configurations that require a positive gate-source voltage to turn on.
3. **Drain-source voltage (VDS)**: 600V
- The maximum drain-to-source voltage that this MOSFET can withstand, suitable for high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum gate-source voltage allowed to be applied, providing flexibility for the drive circuit.
5. **Threshold voltage (Vth)**: 3.5V
- The gate-source voltage at which the MOSFET starts to turn on, determining its switching characteristics.
6. **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- The on-resistance at a gate-source voltage of 10V affects the power loss and overall efficiency of the MOSFET.
7. **Continuous leakage current (ID)**: 15A
- The maximum continuous leakage current that the MOSFET can handle, suitable for applications with higher current loads.
8. **Technology**: SJ_Multi-EPI
- Using multi-layer EPI technology, it provides excellent electrical performance and high reliability, especially suitable for high voltage applications.
Domain and module applications：
Application Examples
The DTP15N60SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage switching power supply**:
- The 600V drain-source voltage capability of the DTP15N60SJ-VB makes it very suitable for high-voltage switching power supplies (SMPS). It can provide stable switching performance under high voltage conditions and is widely used in power converters, industrial power supplies and high-voltage power modules.
2. **Power inverter**:
- In photovoltaic inverters, wind power generation systems and other power inverter applications, this MOSFET can be used as a high-voltage switching element for power conversion. Its high voltage tolerance and high current capability ensure the stability and reliability of the system.
3. **Motor drive system**:
- The DTP15N60SJ-VB is suitable for motor drive applications such as industrial motor control and automation systems. Its high power handling capability makes it suitable for medium and high power motor control, and can effectively control the start, stop and speed regulation of the motor.
4. **High Power Management**:
- In high power management applications, such as power factor correction (PFC) circuits, this MOSFET can be used as an efficient switching element. Its high voltage capability and low on-resistance help improve the overall efficiency and power factor of the power module.
The high voltage and high power characteristics of the DTP15N60SJ-VB make it excellent in high voltage circuit applications that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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