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DTP15N60FSJ-VB Product details
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DTP15N60FSJ-VB MOSFET Product Introduction
DTP15N60FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and medium power applications. This MOSFET supports a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.5V, the maximum on-resistance (RDS(ON)) is 280mΩ at VGS=10V, and the maximum drain current (ID) is 15A. This makes the DTP15N60FSJ-VB perform well in applications requiring high voltage and medium current.
DTP15N60FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and medium power applications. This MOSFET supports a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.5V, the maximum on-resistance (RDS(ON)) is 280mΩ at VGS=10V, and the maximum drain current (ID) is 15A. This makes the DTP15N60FSJ-VB perform well in applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- TO220F package provides excellent heat dissipation performance, suitable for high power applications, with strong mechanical strength and electrical performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, can provide stable electrical characteristics and switching performance.
- **Drain-source voltage (VDS)**: 600V
- This MOSFET can withstand voltages up to 600V, suitable for high voltage circuit design.
- **Gate-source voltage (VGS)**: ±30V
- The maximum gate withstand voltage is ±30V, which adapts to a wide range of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 280mΩ
- The relatively low on-resistance at VGS=10V helps reduce power loss.
- **Drain current (ID)**: 15A
- The maximum drain current is 15A, suitable for switching control of medium power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves voltage withstand capability and optimizes the switching performance of MOSFETs for high voltage applications.
- **Package type**: TO220F
- TO220F package provides excellent heat dissipation performance, suitable for high power applications, with strong mechanical strength and electrical performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, can provide stable electrical characteristics and switching performance.
- **Drain-source voltage (VDS)**: 600V
- This MOSFET can withstand voltages up to 600V, suitable for high voltage circuit design.
- **Gate-source voltage (VGS)**: ±30V
- The maximum gate withstand voltage is ±30V, which adapts to a wide range of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 280mΩ
- The relatively low on-resistance at VGS=10V helps reduce power loss.
- **Drain current (ID)**: 15A
- The maximum drain current is 15A, suitable for switching control of medium power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves voltage withstand capability and optimizes the switching performance of MOSFETs for high voltage applications.
Domain and module applications：
Applicable fields and module applications
DTP15N60FSJ-VB MOSFET is widely used in many fields due to its high voltage and medium power characteristics. In the field of power electronics, this MOSFET can be used in high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits to provide stable power management and high efficiency. In industrial automation systems, it can be used in motor drivers and power amplifier modules to ensure reliable operation under high voltage conditions.
In renewable energy systems such as power inverters and solar inverters, DTP15N60FSJ-VB is an ideal switching element that can help improve energy conversion efficiency and ensure stable operation of the system. In the field of automotive electronics, it can be used in battery management systems for electric vehicles to provide reliable power switching and protection functions, supporting safe and efficient management of high-voltage batteries.
In general, DTP15N60FSJ-VB is a MOSFET suitable for high voltage and medium power applications, and is widely used in power management, industrial automation, and power electronics systems.
DTP15N60FSJ-VB MOSFET is widely used in many fields due to its high voltage and medium power characteristics. In the field of power electronics, this MOSFET can be used in high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits to provide stable power management and high efficiency. In industrial automation systems, it can be used in motor drivers and power amplifier modules to ensure reliable operation under high voltage conditions.
In renewable energy systems such as power inverters and solar inverters, DTP15N60FSJ-VB is an ideal switching element that can help improve energy conversion efficiency and ensure stable operation of the system. In the field of automotive electronics, it can be used in battery management systems for electric vehicles to provide reliable power switching and protection functions, supporting safe and efficient management of high-voltage batteries.
In general, DTP15N60FSJ-VB is a MOSFET suitable for high voltage and medium power applications, and is widely used in power management, industrial automation, and power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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