Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
11A |
|
|
500mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
11A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
11A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
Applications and Module Examples
1. **High Voltage Power Converters**: The DTP11N80SJ-VB is ideal for high voltage power converters such as AC-DC converters and high voltage DC-DC converters. Its high drain-source voltage allows stable operation at high voltage inputs, while its reasonable on-resistance helps improve conversion efficiency and reduce power losses.
2. **Switch Mode Power Supply (SMPS)**: In switch mode power supply applications, this MOSFET can be used as a high voltage switching element. Its high voltage tolerance ensures stable performance in systems that require high voltage switching operations, such as in the switching operations of power modules.
3. **Inverters and Power Amplifiers**: The DTP11N80SJ-VB is suitable for applications such as inverters and power amplifiers that require high voltage and medium current handling capabilities. Its high voltage capability and low on-resistance enable it to remain stable under high power conditions, thereby improving the overall performance and efficiency of the equipment.
4. **Power protection circuit**: In the power protection circuit, this MOSFET can be used for high voltage overvoltage protection and power limiting applications. Its high voltage tolerance helps protect other circuit components from overvoltage, ensuring system safety and reliability.
These application examples demonstrate the wide applicability of DTP11N80SJ-VB in high voltage and power management, providing stable performance and reliable solutions for a variety of power and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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