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DTP11N80FSJ-VB Product details
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1. DTP11N80FSJ-VB Product Introduction
DTP11N80FSJ-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. The MOSFET provides 800V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) range to ensure its reliability in high voltage environments. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 480mΩ @ VGS=10V, and the maximum drain current (ID) is 11A. It uses SJ_Multi-EPI technology, which improves the device's voltage resistance and conduction performance, and is suitable for high voltage switches and power management systems.
DTP11N80FSJ-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. The MOSFET provides 800V drain-source voltage (VDS) and ±30V gate-source voltage (VGS) range to ensure its reliability in high voltage environments. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 480mΩ @ VGS=10V, and the maximum drain current (ID) is 11A. It uses SJ_Multi-EPI technology, which improves the device's voltage resistance and conduction performance, and is suitable for high voltage switches and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | 480mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. DTP11N80FSJ-VB Detailed parameter description
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 480mΩ @ VGS = 10V
7. **Drain current (ID)**: 11A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 125W
10. **Operating temperature range**: -55°C to 150°C
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 480mΩ @ VGS = 10V
7. **Drain current (ID)**: 11A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 125W
10. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
The high withstand voltage and excellent conduction performance of DTP11N80FSJ-VB make it suitable for multiple high-voltage and power-intensive applications:
1. **High-voltage power converter**: DTP11N80FSJ-VB is an ideal choice in high-voltage power converters, especially in applications that handle high-voltage inputs and provide stable outputs, such as AC-DC converters. Its 800V drain-source voltage capability and relatively low on-resistance enable it to provide efficient power conversion in high-voltage environments.
2. **Industrial power management**: In industrial power management systems, this MOSFET is used as a high-voltage switching element to control the flow of power and ensure the stability of the system. Its high voltage capability and reliable performance make it suitable for a variety of industrial power and power protection applications.
3. **Inverter**: In high-voltage inverters, DTP11N80FSJ-VB is used as a switching element to convert DC power to AC power. Its high voltage resistance ensures stability under high voltage conditions, making it suitable for use in solar inverters and other high-power inverter systems.
4. **Motor Drive**: The DTP11N80FSJ-VB can be used in motor drives as a high-voltage switching element to control the start and operation of the motor. Its high voltage resistance and current handling capabilities make it an excellent performer in high-voltage motor control applications and can handle high-power loads.
These features make the DTP11N80FSJ-VB a reliable choice in high-voltage, high-power applications, providing excellent performance and durability.
The high withstand voltage and excellent conduction performance of DTP11N80FSJ-VB make it suitable for multiple high-voltage and power-intensive applications:
1. **High-voltage power converter**: DTP11N80FSJ-VB is an ideal choice in high-voltage power converters, especially in applications that handle high-voltage inputs and provide stable outputs, such as AC-DC converters. Its 800V drain-source voltage capability and relatively low on-resistance enable it to provide efficient power conversion in high-voltage environments.
2. **Industrial power management**: In industrial power management systems, this MOSFET is used as a high-voltage switching element to control the flow of power and ensure the stability of the system. Its high voltage capability and reliable performance make it suitable for a variety of industrial power and power protection applications.
3. **Inverter**: In high-voltage inverters, DTP11N80FSJ-VB is used as a switching element to convert DC power to AC power. Its high voltage resistance ensures stability under high voltage conditions, making it suitable for use in solar inverters and other high-power inverter systems.
4. **Motor Drive**: The DTP11N80FSJ-VB can be used in motor drives as a high-voltage switching element to control the start and operation of the motor. Its high voltage resistance and current handling capabilities make it an excellent performer in high-voltage motor control applications and can handle high-power loads.
These features make the DTP11N80FSJ-VB a reliable choice in high-voltage, high-power applications, providing excellent performance and durability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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