DTP11N70FSJ-VB Product details
Product introduction:
DTP11N70FSJ-VB is a high-voltage N-channel MOSFET in a TO220F package, designed for applications requiring high voltage and high power. The device can withstand drain-source voltage (VDS) up to 700V and has a gate-source voltage (VGS) range of 30V, suitable for stable operation in high-voltage environments. The DTP11N70FSJ-VB has a gate threshold voltage (Vth) of 3.5V, which can be reliably started at a lower gate voltage. Its on-resistance (RDS(ON)) is 450mΩ@VGS=10V, which is relatively high, but its high voltage tolerance and robust performance make it perform well in high-voltage applications. The DTP11N70FSJ-VB uses SJ_Multi-EPI technology to improve the breakdown voltage and switching efficiency of the device.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power consumption**: Calculated according to specific heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
The high voltage and high power characteristics of the DTP11N70FSJ-VB MOSFET enable it to excel in multiple application fields:
1. **High voltage power converter**: In high voltage DC-DC and AC-DC converters, the DTP11N70FSJ-VB is able to handle high voltage inputs and provide stable conversion performance. Its high voltage withstand capability and reliable switching characteristics make it suitable for high voltage power modules and power management systems.
2. **Solar inverter**: The DTP11N70FSJ-VB is suitable for solar inverters, which can handle the high voltage DC output from solar panels and convert it into AC. The high voltage withstand capability and low on-resistance of this MOSFET help improve the efficiency and reliability of the inverter.
3. **Power management system**: In power management systems, the DTP11N70FSJ-VB can be used as a switching element for high voltage load switches and power protection circuits. It can effectively manage current flow and voltage protection, and is suitable for various power management modules.
4. **Industrial Motor Drive**: The DTP11N70FSJ-VB provides stable current control in industrial motor drive applications, and is suitable for motor drive applications that require high voltage and high power, such as power tools, electric appliances, and automation equipment.
These application examples demonstrate the wide applicability of the DTP11N70FSJ-VB in high voltage and high power handling environments.
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