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DTP11N65FSJ-VB Product details
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DTP11N65FSJ-VB MOSFET Product Introduction
DTP11N65FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F. It is designed for applications requiring high voltage and medium power, supporting a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This MOSFET uses SJ_Multi-EPI technology, providing excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.5V, the maximum on-resistance (RDS(ON)) is 420mΩ at VGS=10V, and the maximum drain current (ID) is 11A. This makes the DTP11N65FSJ-VB a reliable choice in a variety of high voltage applications.
DTP11N65FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F. It is designed for applications requiring high voltage and medium power, supporting a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This MOSFET uses SJ_Multi-EPI technology, providing excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.5V, the maximum on-resistance (RDS(ON)) is 420mΩ at VGS=10V, and the maximum drain current (ID) is 11A. This makes the DTP11N65FSJ-VB a reliable choice in a variety of high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 11A | 420mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- TO220F package design is suitable for high power applications, with good heat dissipation performance and mechanical strength, suitable for circuits that require high power handling.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation circuits, with stable electrical characteristics.
- **Drain-source voltage (VDS)**: 650V
- This MOSFET can withstand a voltage of up to 650V, suitable for high voltage circuit design.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, which adapts to a variety of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct when VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 420mΩ
- The on-resistance is higher at VGS=10V, but still provides reasonable power loss control in high voltage applications.
- **Drain current (ID)**: 11A
- The maximum drain current is 11A, suitable for switching control of medium power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances voltage withstand capability and switching performance for high voltage applications.
- **Package type**: TO220F
- TO220F package design is suitable for high power applications, with good heat dissipation performance and mechanical strength, suitable for circuits that require high power handling.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation circuits, with stable electrical characteristics.
- **Drain-source voltage (VDS)**: 650V
- This MOSFET can withstand a voltage of up to 650V, suitable for high voltage circuit design.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, which adapts to a variety of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct when VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 420mΩ
- The on-resistance is higher at VGS=10V, but still provides reasonable power loss control in high voltage applications.
- **Drain current (ID)**: 11A
- The maximum drain current is 11A, suitable for switching control of medium power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances voltage withstand capability and switching performance for high voltage applications.
Domain and module applications：
Applicable fields and module applications
The high voltage and medium power characteristics of DTP11N65FSJ-VB MOSFET make it suitable for multiple high voltage applications. In the field of power electronics, it can be used in high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits to provide stable power conversion and management. In industrial automation systems, this MOSFET can be used in motor drivers and power amplifiers to ensure stable operation under high voltage conditions.
In renewable energy systems such as power inverters and solar inverters, DTP11N65FSJ-VB can be used as a key switching element to help improve energy conversion efficiency and ensure efficient operation of the system. In the field of automotive electronics, it is suitable for high voltage battery management systems of electric vehicles, providing reliable power switching and protection functions for vehicles.
In general, DTP11N65FSJ-VB is a high voltage, high reliability MOSFET that is widely used in power management, industrial automation, power electronics systems and other fields.
The high voltage and medium power characteristics of DTP11N65FSJ-VB MOSFET make it suitable for multiple high voltage applications. In the field of power electronics, it can be used in high voltage switch mode power supplies (SMPS), power converters, and power regulation circuits to provide stable power conversion and management. In industrial automation systems, this MOSFET can be used in motor drivers and power amplifiers to ensure stable operation under high voltage conditions.
In renewable energy systems such as power inverters and solar inverters, DTP11N65FSJ-VB can be used as a key switching element to help improve energy conversion efficiency and ensure efficient operation of the system. In the field of automotive electronics, it is suitable for high voltage battery management systems of electric vehicles, providing reliable power switching and protection functions for vehicles.
In general, DTP11N65FSJ-VB is a high voltage, high reliability MOSFET that is widely used in power management, industrial automation, power electronics systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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