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DTP11N50FSJ-VB Product details
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Product Introduction
DTP11N50FSJ-VB is a high-voltage N-channel MOSFET in TO220F package. It uses SJ_Multi-EPI technology to provide a drain-source voltage (VDS) capability of up to 500V, which is very suitable for high-voltage applications. With a maximum drain current (ID) of 11A and a relatively low on-resistance (RDS(ON)), this MOSFET is designed to achieve high efficiency and low power consumption. Its gate-source voltage range is ±30V and the threshold voltage (Vth) is 3.5V, making it excellent in high-voltage and high-current applications.
DTP11N50FSJ-VB is a high-voltage N-channel MOSFET in TO220F package. It uses SJ_Multi-EPI technology to provide a drain-source voltage (VDS) capability of up to 500V, which is very suitable for high-voltage applications. With a maximum drain current (ID) of 11A and a relatively low on-resistance (RDS(ON)), this MOSFET is designed to achieve high efficiency and low power consumption. Its gate-source voltage range is ±30V and the threshold voltage (Vth) is 3.5V, making it excellent in high-voltage and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: DTP11N50FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: DTP11N50FSJ-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
The high voltage tolerance and good current handling capability of the DTP11N50FSJ-VB enable it to excel in multiple high voltage and high current applications. Here are some specific application scenarios:
1. **High voltage power converter**: The DTP11N50FSJ-VB can be used in high voltage power converters as a switching element to convert high voltage DC to lower voltage DC. Its 500V drain-source voltage capability ensures reliability in high voltage environments and is suitable for industrial power supplies, power adapters, and other high voltage power systems.
2. **Power inverter**: In power inverters, this MOSFET is used to convert DC to AC. Its high voltage tolerance makes it suitable for use in photovoltaic power generation systems, wind power generation systems, and other inverter applications that require high voltage handling.
3. **High voltage switching circuit**: The DTP11N50FSJ-VB is suitable for high voltage switching circuits, including high voltage load switches and power distribution systems. In these applications, the MOSFET's high voltage handling capability and low on-resistance can effectively control and switch high voltage loads, ensuring system safety and stability.
4. **Motor drive system**: In motor drive applications that require high voltage isolation and stable operation, such as industrial motor drives and high-voltage power tools, the DTP11N50FSJ-VB provides reliable switching performance and is suitable for high voltage motor control and drive circuits.
These applications demonstrate the superior performance of the DTP11N50FSJ-VB in high voltage environments, and are particularly suitable for electronic devices and power management systems that require high voltage tolerance and high current handling.
The high voltage tolerance and good current handling capability of the DTP11N50FSJ-VB enable it to excel in multiple high voltage and high current applications. Here are some specific application scenarios:
1. **High voltage power converter**: The DTP11N50FSJ-VB can be used in high voltage power converters as a switching element to convert high voltage DC to lower voltage DC. Its 500V drain-source voltage capability ensures reliability in high voltage environments and is suitable for industrial power supplies, power adapters, and other high voltage power systems.
2. **Power inverter**: In power inverters, this MOSFET is used to convert DC to AC. Its high voltage tolerance makes it suitable for use in photovoltaic power generation systems, wind power generation systems, and other inverter applications that require high voltage handling.
3. **High voltage switching circuit**: The DTP11N50FSJ-VB is suitable for high voltage switching circuits, including high voltage load switches and power distribution systems. In these applications, the MOSFET's high voltage handling capability and low on-resistance can effectively control and switch high voltage loads, ensuring system safety and stability.
4. **Motor drive system**: In motor drive applications that require high voltage isolation and stable operation, such as industrial motor drives and high-voltage power tools, the DTP11N50FSJ-VB provides reliable switching performance and is suitable for high voltage motor control and drive circuits.
These applications demonstrate the superior performance of the DTP11N50FSJ-VB in high voltage environments, and are particularly suitable for electronic devices and power management systems that require high voltage tolerance and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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