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DTP10N80FSJ-VB Product details
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1. DTP10N80FSJ-VB Product Introduction
DTP10N80FSJ-VB is a high voltage N-channel MOSFET in TO220F package. It is designed to withstand drain-source voltage (VDS) up to 800V, suitable for high voltage and high power applications. The device has a gate-source voltage range (VGS) of 30V and a gate threshold voltage (Vth) of 3.3V, providing stable switching performance and reliability. DTP10N80FSJ-VB adopts SJ_Multi-EPI technology to enhance the breakdown voltage and switching efficiency. Although its on-resistance (RDS(ON)) is 600mΩ@VGS=10V, it can ensure reliable current transmission and control under high voltage conditions.
DTP10N80FSJ-VB is a high voltage N-channel MOSFET in TO220F package. It is designed to withstand drain-source voltage (VDS) up to 800V, suitable for high voltage and high power applications. The device has a gate-source voltage range (VGS) of 30V and a gate threshold voltage (Vth) of 3.3V, providing stable switching performance and reliability. DTP10N80FSJ-VB adopts SJ_Multi-EPI technology to enhance the breakdown voltage and switching efficiency. Although its on-resistance (RDS(ON)) is 600mΩ@VGS=10V, it can ensure reliable current transmission and control under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.3V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.3V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.3V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. DTP10N80FSJ-VB Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power consumption**: Calculated according to specific heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power consumption**: Calculated according to specific heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Applications and Module Examples
The DTP10N80FSJ-VB MOSFET is designed to excel in multiple high voltage and high power applications:
1. **High Voltage Power Converters**: The DTP10N80FSJ-VB is ideal for use in high voltage DC-DC and AC-DC converters, especially in applications that require high voltage handling capabilities. It can effectively perform voltage conversion, improving the overall efficiency and stability of the system.
2. **Solar Inverters**: In solar inverters, the DTP10N80FSJ-VB is able to handle high voltage DC input and convert it to AC. Its high voltage withstand capability and stable switching performance ensure the reliability and efficiency of the inverter.
3. **Power Management Systems**: In power management systems, such as power protection circuits and power supply modules, the DTP10N80FSJ-VB is able to provide efficient current control and voltage management. It is suitable for use in a variety of power modules, especially in applications that require high voltage and high power handling.
4. **Industrial Motor Drive**: DTP10N80FSJ-VB can be used in industrial motor drive applications, especially where high voltage control is required. It is suitable for driving high-power motors, such as power tools, home appliances, and automation equipment, to provide stable power control and management.
These application examples demonstrate the wide applicability of DTP10N80FSJ-VB in high voltage and high power environments.
The DTP10N80FSJ-VB MOSFET is designed to excel in multiple high voltage and high power applications:
1. **High Voltage Power Converters**: The DTP10N80FSJ-VB is ideal for use in high voltage DC-DC and AC-DC converters, especially in applications that require high voltage handling capabilities. It can effectively perform voltage conversion, improving the overall efficiency and stability of the system.
2. **Solar Inverters**: In solar inverters, the DTP10N80FSJ-VB is able to handle high voltage DC input and convert it to AC. Its high voltage withstand capability and stable switching performance ensure the reliability and efficiency of the inverter.
3. **Power Management Systems**: In power management systems, such as power protection circuits and power supply modules, the DTP10N80FSJ-VB is able to provide efficient current control and voltage management. It is suitable for use in a variety of power modules, especially in applications that require high voltage and high power handling.
4. **Industrial Motor Drive**: DTP10N80FSJ-VB can be used in industrial motor drive applications, especially where high voltage control is required. It is suitable for driving high-power motors, such as power tools, home appliances, and automation equipment, to provide stable power control and management.
These application examples demonstrate the wide applicability of DTP10N80FSJ-VB in high voltage and high power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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