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DTP10N65FSJ-VB Product details
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DTP10N65FSJ-VB MOSFET Product Introduction
DTP10N65FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and high power applications. The MOSFET supports a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.5V, the maximum on-resistance (RDS(ON)) is 360mΩ at VGS=10V, and the maximum drain current (ID) is 10A. This device is very suitable for applications requiring high voltage and medium power.
DTP10N65FSJ-VB is a high voltage single N-channel MOSFET packaged in TO220F, designed for high voltage and high power applications. The MOSFET supports a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide excellent voltage tolerance and switching performance. Its threshold voltage (Vth) is 3.5V, the maximum on-resistance (RDS(ON)) is 360mΩ at VGS=10V, and the maximum drain current (ID) is 10A. This device is very suitable for applications requiring high voltage and medium power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 360mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- TO220F package provides excellent heat dissipation performance, suitable for high power applications, with good mechanical strength and electrical performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, providing stable electrical characteristics and switching performance.
- **Drain-source voltage (VDS)**: 650V
- This MOSFET can withstand voltages up to 650V, suitable for high voltage circuit design.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, which adapts to a wide range of driving voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 360mΩ
- This value is suitable for high voltage applications while maintaining reasonable power loss.
- **Drain current (ID)**: 10A
- Maximum drain current is 10A, suitable for switching control of medium power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides enhanced voltage withstand capability and excellent switching performance for high voltage applications.
- **Package type**: TO220F
- TO220F package provides excellent heat dissipation performance, suitable for high power applications, with good mechanical strength and electrical performance.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high voltage switching and power regulation applications, providing stable electrical characteristics and switching performance.
- **Drain-source voltage (VDS)**: 650V
- This MOSFET can withstand voltages up to 650V, suitable for high voltage circuit design.
- **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that the gate can withstand is ±30V, which adapts to a wide range of driving voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 360mΩ
- This value is suitable for high voltage applications while maintaining reasonable power loss.
- **Drain current (ID)**: 10A
- Maximum drain current is 10A, suitable for switching control of medium power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides enhanced voltage withstand capability and excellent switching performance for high voltage applications.
Domain and module applications：
Applicable fields and module applications
The high voltage and medium power characteristics of the DTP10N65FSJ-VB MOSFET make it suitable for multiple high voltage applications. In power management, this MOSFET can be used in switch mode power supplies (SMPS), high voltage converters, and power regulation circuits to ensure high efficiency and stability. In industrial automation systems, it can be used in motor drivers and power amplifier modules to provide reliable switching control and overcurrent protection.
In the field of power electronics, this MOSFET is suitable for high voltage motor control, power inverters, and power protection modules to ensure efficient and stable operation of the power system. In addition, it is also suitable for inverters in renewable energy systems, such as solar inverters and wind energy converters. The DTP10N65FSJ-VB can effectively manage and convert energy under high voltage conditions.
In general, the DTP10N65FSJ-VB is a high voltage, high reliability MOSFET that is widely used in power management, industrial automation, and power electronics systems.
The high voltage and medium power characteristics of the DTP10N65FSJ-VB MOSFET make it suitable for multiple high voltage applications. In power management, this MOSFET can be used in switch mode power supplies (SMPS), high voltage converters, and power regulation circuits to ensure high efficiency and stability. In industrial automation systems, it can be used in motor drivers and power amplifier modules to provide reliable switching control and overcurrent protection.
In the field of power electronics, this MOSFET is suitable for high voltage motor control, power inverters, and power protection modules to ensure efficient and stable operation of the power system. In addition, it is also suitable for inverters in renewable energy systems, such as solar inverters and wind energy converters. The DTP10N65FSJ-VB can effectively manage and convert energy under high voltage conditions.
In general, the DTP10N65FSJ-VB is a high voltage, high reliability MOSFET that is widely used in power management, industrial automation, and power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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