DTP10N60FSJ-VB Product details
Product introduction:
DTP10N60FSJ-VB is a high-performance N-channel MOSFET in TO220F package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) of 600V, suitable for power supply and switching applications that handle high voltage. This MOSFET adopts SJ_Multi-EPI technology, which provides excellent performance and high reliability for the device. The threshold voltage (Vth) of DTP10N60FSJ-VB is 3.5V, the on-resistance (RDS(ON)) is 450mΩ (at VGS = 10V), and it can support a drain current (ID) of up to 10A. The device provides reliable performance in high voltage and high current applications and is suitable for various power supply and switch control modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 10A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
**1. Power management **
DTP10N60FSJ-VB performs well in power management systems, such as AC-DC power converters and DC-DC converters. Its 600V drain-source voltage allows it to handle high voltage environments, while low on-resistance and high current carrying capacity ensure high efficiency and stability during power conversion, reducing energy consumption and heat generation.
**2. Industrial motor drive **
In industrial motor drive applications, such as DC motors and stepper motor drivers, DTP10N60FSJ-VB is able to handle high voltage and high current requirements. Its reliable switching performance and high voltage tolerance make it stable in motor control, improving the control accuracy and efficiency of the motor.
**3. Inverter **
DTP10N60FSJ-VB is suitable for high voltage inverters, such as solar photovoltaic inverters and wind power inverters. Its high voltage and high current handling capabilities enable it to efficiently convert and manage power, ensuring stable operation of inverters in high-power applications.
**4. High-voltage switch**
This MOSFET can be used in high-voltage switching power modules, such as battery management systems and high-voltage switch controls. Its 600V drain-source voltage and stable switching performance enable it to reliably perform switching operations in high-voltage environments, ensuring the safety and stability of the system.
**5. Lighting control**
In high-voltage lighting systems, such as high-voltage xenon lamps and LED drivers, the DTP10N60FSJ-VB can be used as a switching element to handle high voltage and high current. Its low on-resistance and high voltage withstand capability ensure efficient and reliable operation of the lighting system.
With its high voltage and high current capabilities, the DTP10N60FSJ-VB provides a stable and efficient solution in a variety of high-power and high-voltage applications.
Technical support:
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