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DTN20N65SJ-VB Product details
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Product Introduction
DTN20N65SJ-VB is a high voltage N-channel MOSFET in TO247 package and manufactured using SJ_Multi-EPI technology. It is designed to handle high voltage and high current applications, with excellent conduction performance and reliable switching characteristics. This MOSFET is suitable for various power management and switching applications that require high voltage protection and high current handling.
DTN20N65SJ-VB is a high voltage N-channel MOSFET in TO247 package and manufactured using SJ_Multi-EPI technology. It is designed to handle high voltage and high current applications, with excellent conduction performance and reliable switching characteristics. This MOSFET is suitable for various power management and switching applications that require high voltage protection and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and module examples
1. **High-voltage power converters**: DTN20N65SJ-VB is particularly suitable for high-voltage power converters, such as AC-DC converters and DC-DC converters. Its high drain-source voltage allows it to handle high input voltages, while its reasonable on-resistance helps improve conversion efficiency and reduce energy losses.
2. **Switch-mode power supply (SMPS)**: In a switch-mode power supply, this MOSFET can be used as a high-voltage switching element. Its high voltage tolerance and stable switching performance make it suitable for scenarios that require high-voltage switching operations, such as high-power load switching and power management.
3. **Inverters and power amplifiers**: DTN20N65SJ-VB is suitable for the design of inverters and power amplifiers, especially in applications that handle high voltages and high currents. Its high current capability and good thermal performance help these devices maintain stable and efficient operation under high load conditions.
4. **Electric Vehicles and Industrial Power**: In electric vehicles and industrial power systems, this MOSFET can be used in high voltage power supplies and power conversion modules. Its high voltage and current handling capabilities ensure reliability in harsh environments, providing stable power supply and control for electric vehicles and industrial equipment.
These applications demonstrate the DTN20N65SJ-VB's potential for wide application in high voltage and high power environments, and its stable performance and reliability make it a key power supply and power management component.
1. **High-voltage power converters**: DTN20N65SJ-VB is particularly suitable for high-voltage power converters, such as AC-DC converters and DC-DC converters. Its high drain-source voltage allows it to handle high input voltages, while its reasonable on-resistance helps improve conversion efficiency and reduce energy losses.
2. **Switch-mode power supply (SMPS)**: In a switch-mode power supply, this MOSFET can be used as a high-voltage switching element. Its high voltage tolerance and stable switching performance make it suitable for scenarios that require high-voltage switching operations, such as high-power load switching and power management.
3. **Inverters and power amplifiers**: DTN20N65SJ-VB is suitable for the design of inverters and power amplifiers, especially in applications that handle high voltages and high currents. Its high current capability and good thermal performance help these devices maintain stable and efficient operation under high load conditions.
4. **Electric Vehicles and Industrial Power**: In electric vehicles and industrial power systems, this MOSFET can be used in high voltage power supplies and power conversion modules. Its high voltage and current handling capabilities ensure reliability in harsh environments, providing stable power supply and control for electric vehicles and industrial equipment.
These applications demonstrate the DTN20N65SJ-VB's potential for wide application in high voltage and high power environments, and its stable performance and reliability make it a key power supply and power management component.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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