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DTN20N60SJ-VB Product details
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1. DTN20N60SJ-VB Product Introduction
DTN20N60SJ-VB is a single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V, ensuring its stability and reliability in high voltage environments. The turn-on voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, and the maximum drain current (ID) is 20A. DTN20N60SJ-VB uses SJ_Multi-EPI technology to improve its voltage resistance and conduction performance, making it suitable for use in demanding power management and high-efficiency switching circuits.
DTN20N60SJ-VB is a single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) range of ±30V, ensuring its stability and reliability in high voltage environments. The turn-on voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, and the maximum drain current (ID) is 20A. DTN20N60SJ-VB uses SJ_Multi-EPI technology to improve its voltage resistance and conduction performance, making it suitable for use in demanding power management and high-efficiency switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. DTN20N60SJ-VB Detailed parameter description
1. **Package type**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
7. **Drain current (ID)**: 20A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 200W
10. **Operating temperature range**: -55°C to 150°C
1. **Package type**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
7. **Drain current (ID)**: 20A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation (PD)**: 200W
10. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
DTN20N60SJ-VB MOSFET has high voltage resistance and high current handling capabilities, and is widely used in the following fields and modules:
1. **Switching power supply (SMPS)**: DTN20N60SJ-VB is very suitable for use in switching power supplies, especially in industrial and communication power supplies. Its high voltage capability and low on-resistance enable it to provide high efficiency and stability during high power conversion, reduce energy loss and improve power supply reliability.
2. **Photovoltaic inverter**: In photovoltaic inverters, DTN20N60SJ-VB can be used as a power switching element to efficiently process the DC power obtained from solar panels and convert it into AC power. Its high voltage resistance and high current capability ensure stable operation under harsh environmental conditions.
3. **Electric vehicle charger**: This MOSFET can also be used in high-efficiency switching modules in electric vehicle chargers. DTN20N60SJ-VB is able to handle high power current and provide a safe and reliable charging process in a high voltage environment, improving charging efficiency and ensuring the safety of the device.
4. **Motor drive**: In high power motor drive applications, DTN20N60SJ-VB can be used as the main switching element to provide efficient current control and low energy consumption. Its high withstand voltage characteristics make it particularly suitable for driving and controlling high power industrial motors.
DTN20N60SJ-VB MOSFET has high voltage resistance and high current handling capabilities, and is widely used in the following fields and modules:
1. **Switching power supply (SMPS)**: DTN20N60SJ-VB is very suitable for use in switching power supplies, especially in industrial and communication power supplies. Its high voltage capability and low on-resistance enable it to provide high efficiency and stability during high power conversion, reduce energy loss and improve power supply reliability.
2. **Photovoltaic inverter**: In photovoltaic inverters, DTN20N60SJ-VB can be used as a power switching element to efficiently process the DC power obtained from solar panels and convert it into AC power. Its high voltage resistance and high current capability ensure stable operation under harsh environmental conditions.
3. **Electric vehicle charger**: This MOSFET can also be used in high-efficiency switching modules in electric vehicle chargers. DTN20N60SJ-VB is able to handle high power current and provide a safe and reliable charging process in a high voltage environment, improving charging efficiency and ensuring the safety of the device.
4. **Motor drive**: In high power motor drive applications, DTN20N60SJ-VB can be used as the main switching element to provide efficient current control and low energy consumption. Its high withstand voltage characteristics make it particularly suitable for driving and controlling high power industrial motors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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