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DTN15N70SJ-VB Product details
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DTN15N70SJ-VB MOSFET Product Introduction
DTN15N70SJ-VB is a high-voltage single N-channel MOSFET in a TO-247 package. It is designed for circuit applications that require high voltage resistance and high efficiency. The MOSFET can withstand drain-source voltage (VDS) up to 700V and has good current handling capability with a maximum drain current (ID) of 15A. Its on-resistance (RDS(ON)) is 350mΩ at a gate-source voltage (VGS) of 10V, ensuring low power consumption and high efficiency under high voltage conditions. The DTN15N70SJ-VB uses SJ_Multi-EPI technology, providing excellent switching performance and high reliability, and is suitable for use in high-power, high-voltage application environments.
DTN15N70SJ-VB is a high-voltage single N-channel MOSFET in a TO-247 package. It is designed for circuit applications that require high voltage resistance and high efficiency. The MOSFET can withstand drain-source voltage (VDS) up to 700V and has good current handling capability with a maximum drain current (ID) of 15A. Its on-resistance (RDS(ON)) is 350mΩ at a gate-source voltage (VGS) of 10V, ensuring low power consumption and high efficiency under high voltage conditions. The DTN15N70SJ-VB uses SJ_Multi-EPI technology, providing excellent switching performance and high reliability, and is suitable for use in high-power, high-voltage application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 15A | 350mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package**: TO-247
- TO-247 package is suitable for high current and high power applications, providing excellent heat dissipation performance.
2. **Configuration**: Single N-channel
- Single N-channel design, suitable for circuits that require positive voltage between gate and source.
3. **Drain-source voltage (VDS)**: 700V
- The maximum drain-to-source voltage that this MOSFET can withstand, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage allowed to be applied between the gate and source.
5. **Threshold voltage (Vth)**: 3.5V
- The voltage value when the MOSFET starts to turn on, ensuring startup at a lower drive voltage.
6. **On-resistance (RDS(ON))**: 350mΩ @ VGS=10V
- The on-resistance at a gate-source voltage of 10V reflects the efficiency of the MOSFET in the on state.
7. **Continuous leakage current (ID)**: 15A
- The maximum continuous leakage current that the MOSFET can handle, suitable for medium and high current applications.
8. **Technology**: SJ_Multi-EPI
- The use of SJ_Multi-EPI technology enhances the performance of the MOSFET, making it more reliable in high voltage and high power applications.
1. **Package**: TO-247
- TO-247 package is suitable for high current and high power applications, providing excellent heat dissipation performance.
2. **Configuration**: Single N-channel
- Single N-channel design, suitable for circuits that require positive voltage between gate and source.
3. **Drain-source voltage (VDS)**: 700V
- The maximum drain-to-source voltage that this MOSFET can withstand, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage allowed to be applied between the gate and source.
5. **Threshold voltage (Vth)**: 3.5V
- The voltage value when the MOSFET starts to turn on, ensuring startup at a lower drive voltage.
6. **On-resistance (RDS(ON))**: 350mΩ @ VGS=10V
- The on-resistance at a gate-source voltage of 10V reflects the efficiency of the MOSFET in the on state.
7. **Continuous leakage current (ID)**: 15A
- The maximum continuous leakage current that the MOSFET can handle, suitable for medium and high current applications.
8. **Technology**: SJ_Multi-EPI
- The use of SJ_Multi-EPI technology enhances the performance of the MOSFET, making it more reliable in high voltage and high power applications.
Domain and module applications：
Application Examples
The DTN15N70SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power switch**:
- This MOSFET is ideal for high-voltage switch-mode power supplies (SMPS), and its high drain-source voltage capability of 700V enables it to operate under various high-voltage input conditions. It is suitable for switching control of industrial power supplies, server power supplies, and large power equipment.
2. **Inverter and power conversion equipment**:
- In photovoltaic inverters, wind power generation systems, and power conversion equipment, the DTN15N70SJ-VB can be used as a high-voltage switching element, and its high voltage tolerance and high current handling capabilities ensure efficient conversion of electrical energy and reliable operation.
3. **Motor drive and industrial automation**:
- In motor drive systems, this MOSFET can be used to control the start and stop of high-voltage industrial motors. Its high power capability makes it suitable for industrial automation equipment, robot control, and other high-power switching applications that require high reliability.
4. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction circuit, DTN15N70SJ-VB can be used as an efficient power switching element to improve the power factor of the system. Its high voltage and low on-resistance make it perform well in high-power PFC modules.
The high voltage and high power characteristics of DTN15N70SJ-VB make it widely used in multiple high-voltage circuits that require high reliability and high efficiency.
The DTN15N70SJ-VB MOSFET is suitable for the following fields and modules:
1. **High-voltage power switch**:
- This MOSFET is ideal for high-voltage switch-mode power supplies (SMPS), and its high drain-source voltage capability of 700V enables it to operate under various high-voltage input conditions. It is suitable for switching control of industrial power supplies, server power supplies, and large power equipment.
2. **Inverter and power conversion equipment**:
- In photovoltaic inverters, wind power generation systems, and power conversion equipment, the DTN15N70SJ-VB can be used as a high-voltage switching element, and its high voltage tolerance and high current handling capabilities ensure efficient conversion of electrical energy and reliable operation.
3. **Motor drive and industrial automation**:
- In motor drive systems, this MOSFET can be used to control the start and stop of high-voltage industrial motors. Its high power capability makes it suitable for industrial automation equipment, robot control, and other high-power switching applications that require high reliability.
4. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction circuit, DTN15N70SJ-VB can be used as an efficient power switching element to improve the power factor of the system. Its high voltage and low on-resistance make it perform well in high-power PFC modules.
The high voltage and high power characteristics of DTN15N70SJ-VB make it widely used in multiple high-voltage circuits that require high reliability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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