中文
English
DTN14N50SJ-VB Product details
Back to previous pageProduct introduction：
DTN14N50SJ-VB MOSFET Product Introduction
DTN14N50SJ-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for applications requiring high voltage and high current. It has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide excellent voltage tolerance and switching performance. The threshold voltage (Vth) of this MOSFET is 3.5V, the maximum on-resistance (RDS(ON)) is 240mΩ at VGS=10V, and the maximum drain current (ID) is 14A. Its excellent performance makes it an ideal choice for high-voltage applications.
DTN14N50SJ-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for applications requiring high voltage and high current. It has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology to provide excellent voltage tolerance and switching performance. The threshold voltage (Vth) of this MOSFET is 3.5V, the maximum on-resistance (RDS(ON)) is 240mΩ at VGS=10V, and the maximum drain current (ID) is 14A. Its excellent performance makes it an ideal choice for high-voltage applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 14A | 240mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 14A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 14A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- TO247 package is suitable for high power applications, provides good heat dissipation performance, and is suitable for industrial and power electronic equipment.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for switch mode power supplies, power inverters and other high voltage circuits.
- **Drain-source voltage (VDS)**: 500V
- The device can withstand voltages up to 500V, suitable for high voltage applications.
- **Gate-source voltage (VGS)**: ±30V
- The maximum gate withstand voltage is ±30V, which adapts to a variety of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 240mΩ
- This on-resistance value provides reasonable power loss control in high voltage applications.
- **Drain current (ID)**: 14A
- The maximum drain current is 14A, suitable for switching control of high power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances voltage withstand capability and improves MOSFET switching efficiency for high voltage applications.
- **Package type**: TO247
- TO247 package is suitable for high power applications, provides good heat dissipation performance, and is suitable for industrial and power electronic equipment.
- **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for switch mode power supplies, power inverters and other high voltage circuits.
- **Drain-source voltage (VDS)**: 500V
- The device can withstand voltages up to 500V, suitable for high voltage applications.
- **Gate-source voltage (VGS)**: ±30V
- The maximum gate withstand voltage is ±30V, which adapts to a variety of drive voltage requirements.
- **Threshold voltage (Vth)**: 3.5V
- Starts to conduct at VGS=3.5V, suitable for high voltage control signal applications.
- **On-resistance (RDS(ON))**:
- **VGS=10V**: 240mΩ
- This on-resistance value provides reasonable power loss control in high voltage applications.
- **Drain current (ID)**: 14A
- The maximum drain current is 14A, suitable for switching control of high power loads.
- **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology enhances voltage withstand capability and improves MOSFET switching efficiency for high voltage applications.
Domain and module applications：
Applicable fields and module applications
The DTN14N50SJ-VB MOSFET is widely used in various high-voltage and high-power applications due to its high voltage tolerance and medium on-resistance. In power electronic equipment, it is an ideal choice for switch mode power supplies (SMPS), which can provide efficient power conversion under high voltage conditions. In industrial automation systems, this MOSFET can be used in motor drivers and power amplifier modules to ensure stable operation of motors under high power conditions.
In addition, this device also has a wide range of applications in renewable energy systems, such as solar inverters and wind energy converters, where the DTN14N50SJ-VB can be used as a key switching element to help improve energy conversion efficiency. In the field of automotive electronics, this MOSFET can be used for power management and high-voltage battery management systems in electric vehicles to ensure safe and efficient operation of vehicles.
In general, the DTN14N50SJ-VB is a MOSFET suitable for high-voltage and high-power applications, and is widely used in power electronics, industrial automation, and renewable energy systems.
The DTN14N50SJ-VB MOSFET is widely used in various high-voltage and high-power applications due to its high voltage tolerance and medium on-resistance. In power electronic equipment, it is an ideal choice for switch mode power supplies (SMPS), which can provide efficient power conversion under high voltage conditions. In industrial automation systems, this MOSFET can be used in motor drivers and power amplifier modules to ensure stable operation of motors under high power conditions.
In addition, this device also has a wide range of applications in renewable energy systems, such as solar inverters and wind energy converters, where the DTN14N50SJ-VB can be used as a key switching element to help improve energy conversion efficiency. In the field of automotive electronics, this MOSFET can be used for power management and high-voltage battery management systems in electric vehicles to ensure safe and efficient operation of vehicles.
In general, the DTN14N50SJ-VB is a MOSFET suitable for high-voltage and high-power applications, and is widely used in power electronics, industrial automation, and renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
