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DTN11N80SJ-VB Product details
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Product Introduction
DTN11N80SJ-VB is a high voltage single N-channel MOSFET packaged in TO247, using SJ_Multi-EPI (Super Junction Multilayer Epitaxy) technology. This MOSFET is designed for high voltage and high power applications, with a drain-source voltage of 800V and a drain current capability of 11A. SJ_Multi-EPI technology enhances its conductivity and switching speed, allowing it to maintain efficient operation under high voltage environments. DTN11N80SJ-VB is suitable for power electronics, industrial control, and power conversion.
DTN11N80SJ-VB is a high voltage single N-channel MOSFET packaged in TO247, using SJ_Multi-EPI (Super Junction Multilayer Epitaxy) technology. This MOSFET is designed for high voltage and high power applications, with a drain-source voltage of 800V and a drain current capability of 11A. SJ_Multi-EPI technology enhances its conductivity and switching speed, allowing it to maintain efficient operation under high voltage environments. DTN11N80SJ-VB is suitable for power electronics, industrial control, and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial) technology
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial) technology
Domain and module applications：
Application areas and module examples
1. **Power electronics**: The high drain-source voltage and high current capability of the DTN11N80SJ-VB make it ideal for power electronic devices such as uninterruptible power supplies (UPS) and inverters. It is able to provide reliable switching performance in these high-voltage applications, ensuring efficient and stable power conversion.
2. **Industrial control**: In industrial control systems, this MOSFET can be used for motor control, industrial power supplies, and other high-voltage control circuits. Its 800V withstand voltage and low on-resistance enable it to perform well when controlling high-power loads, ensuring high efficiency and long life of the system.
3. **High-voltage power conversion**: The DTN11N80SJ-VB is ideal for high-voltage power converters and high-frequency switching power supplies. In these applications, the device is able to handle high voltages while maintaining low power consumption and high efficiency, and is suitable for application scenarios with high power density and efficiency requirements.
Through its excellent high voltage handling capability and stable performance, DTN11N80SJ-VB provides a reliable solution for various high voltage applications and is an ideal choice in the fields of industrial and power electronics.
1. **Power electronics**: The high drain-source voltage and high current capability of the DTN11N80SJ-VB make it ideal for power electronic devices such as uninterruptible power supplies (UPS) and inverters. It is able to provide reliable switching performance in these high-voltage applications, ensuring efficient and stable power conversion.
2. **Industrial control**: In industrial control systems, this MOSFET can be used for motor control, industrial power supplies, and other high-voltage control circuits. Its 800V withstand voltage and low on-resistance enable it to perform well when controlling high-power loads, ensuring high efficiency and long life of the system.
3. **High-voltage power conversion**: The DTN11N80SJ-VB is ideal for high-voltage power converters and high-frequency switching power supplies. In these applications, the device is able to handle high voltages while maintaining low power consumption and high efficiency, and is suitable for application scenarios with high power density and efficiency requirements.
Through its excellent high voltage handling capability and stable performance, DTN11N80SJ-VB provides a reliable solution for various high voltage applications and is an ideal choice in the fields of industrial and power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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