中文
English
DTN11N50SJ-VB Product details
Back to previous pageProduct introduction：
Product Introduction: DTN11N50SJ-VB
DTN11N50SJ-VB is a high voltage N-channel MOSFET manufactured using SJ_Multi-EPI technology and packaged in TO247. Designed to meet the needs of high voltage and high power applications, this MOSFET has excellent voltage withstand capability and relatively low on-resistance. Its drain-source voltage (VDS) can reach up to 500V, and the gate-source voltage (VGS) is rated at ±30V, which can remain stable under high voltage operating conditions. Its maximum drain current (ID) is 11A and the on-resistance (RDS(ON)) is 380mΩ @ VGS=10V. DTN11N50SJ-VB is suitable for a variety of high voltage switching, power management and industrial applications, especially in applications requiring reliability and stability.
DTN11N50SJ-VB is a high voltage N-channel MOSFET manufactured using SJ_Multi-EPI technology and packaged in TO247. Designed to meet the needs of high voltage and high power applications, this MOSFET has excellent voltage withstand capability and relatively low on-resistance. Its drain-source voltage (VDS) can reach up to 500V, and the gate-source voltage (VGS) is rated at ±30V, which can remain stable under high voltage operating conditions. Its maximum drain current (ID) is 11A and the on-resistance (RDS(ON)) is 380mΩ @ VGS=10V. DTN11N50SJ-VB is suitable for a variety of high voltage switching, power management and industrial applications, especially in applications requiring reliability and stability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.3V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.3V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.3V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**:
- 380mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**:
- 380mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and module examples:
1. **High voltage switching applications**:
- **Application examples**: High voltage inverters, switching power supplies.
- **Reason**: The 500V withstand voltage and 11A current capacity of DTN11N50SJ-VB make it very suitable for use in high voltage inverters and switching power supplies, and can provide stable and reliable switching functions in high voltage environments.
2. **Power management system**:
- **Application examples**: High voltage power regulators, DC-DC converters.
- **Reason**: Due to its high withstand voltage and low RDS(ON), this MOSFET provides excellent performance in power management systems, especially for voltage conversion and regulation applications that require high efficiency and high reliability.
3. **Industrial equipment power modules**:
- **Application examples**: Industrial power modules, high-power drivers.
- **Reason**: In the industrial field, DTN11N50SJ-VB can handle high voltage and high current loads, and is suitable for use in power modules and high-power drivers of industrial equipment to ensure stable operation of the equipment.
4. **High-voltage protection circuit**:
- **Application examples**: Overvoltage protection circuit, voltage monitor.
- **Reason**: Its high VDS capability and reliable current control make it suitable for use in high-voltage protection circuits, effectively protecting the circuit from overvoltage while providing reliable voltage monitoring functions.
1. **High voltage switching applications**:
- **Application examples**: High voltage inverters, switching power supplies.
- **Reason**: The 500V withstand voltage and 11A current capacity of DTN11N50SJ-VB make it very suitable for use in high voltage inverters and switching power supplies, and can provide stable and reliable switching functions in high voltage environments.
2. **Power management system**:
- **Application examples**: High voltage power regulators, DC-DC converters.
- **Reason**: Due to its high withstand voltage and low RDS(ON), this MOSFET provides excellent performance in power management systems, especially for voltage conversion and regulation applications that require high efficiency and high reliability.
3. **Industrial equipment power modules**:
- **Application examples**: Industrial power modules, high-power drivers.
- **Reason**: In the industrial field, DTN11N50SJ-VB can handle high voltage and high current loads, and is suitable for use in power modules and high-power drivers of industrial equipment to ensure stable operation of the equipment.
4. **High-voltage protection circuit**:
- **Application examples**: Overvoltage protection circuit, voltage monitor.
- **Reason**: Its high VDS capability and reliable current control make it suitable for use in high-voltage protection circuits, effectively protecting the circuit from overvoltage while providing reliable voltage monitoring functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
