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DTL7N80SJ-VB Product details
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Product Introduction: DTL7N80SJ-VB
DTL7N80SJ-VB is a high voltage N-channel MOSFET manufactured using SJ_Multi-EPI technology and packaged in TO251. This MOSFET is designed for high voltage, high power applications and has excellent voltage withstand capability and relatively low on-resistance. Its drain-source voltage (VDS) can reach 800V, and the gate-source voltage (VGS) is rated at ±30V, which can operate stably under high voltage conditions. Its maximum drain current (ID) is 7A and the on-resistance (RDS(ON)) is 850mΩ @ VGS=10V. The DTL7N80SJ-VB is very suitable for high voltage switching and power management systems, and can provide excellent performance in applications requiring high voltage withstand and reliable current control.
DTL7N80SJ-VB is a high voltage N-channel MOSFET manufactured using SJ_Multi-EPI technology and packaged in TO251. This MOSFET is designed for high voltage, high power applications and has excellent voltage withstand capability and relatively low on-resistance. Its drain-source voltage (VDS) can reach 800V, and the gate-source voltage (VGS) is rated at ±30V, which can operate stably under high voltage conditions. Its maximum drain current (ID) is 7A and the on-resistance (RDS(ON)) is 850mΩ @ VGS=10V. The DTL7N80SJ-VB is very suitable for high voltage switching and power management systems, and can provide excellent performance in applications requiring high voltage withstand and reliable current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples:
1. **High voltage switch applications**:
- **Application examples**: High voltage power switches, power inverters.
- **Reason**: The high VDS capability of the DTL7N80SJ-VB makes it suitable for high voltage switch applications such as power inverters and high voltage power switches, which can work stably and effectively control current in high voltage environments.
2. **Power management systems**:
- **Application examples**: High voltage power regulators, power factor correction (PFC) circuits.
- **Reason**: Due to its high withstand voltage and low RDS(ON), this MOSFET is suitable for high voltage power management systems, which can provide stable performance in power conversion and voltage regulation.
3. **Industrial power modules**:
- **Application examples**: Industrial equipment power modules, power converters.
- **Reason**: In industrial applications, the DTL7N80SJ-VB is able to handle high voltage loads, providing reliable power for industrial equipment while meeting stability requirements in high voltage environments.
4. **High Voltage Protection Circuit**:
- **Application Examples**: Voltage protector, overvoltage protection circuit.
- **Reason**: The high VDS characteristics of this MOSFET make it suitable for use in high voltage protection circuits, effectively protecting the circuit from overvoltage shocks and providing reliable protection.
1. **High voltage switch applications**:
- **Application examples**: High voltage power switches, power inverters.
- **Reason**: The high VDS capability of the DTL7N80SJ-VB makes it suitable for high voltage switch applications such as power inverters and high voltage power switches, which can work stably and effectively control current in high voltage environments.
2. **Power management systems**:
- **Application examples**: High voltage power regulators, power factor correction (PFC) circuits.
- **Reason**: Due to its high withstand voltage and low RDS(ON), this MOSFET is suitable for high voltage power management systems, which can provide stable performance in power conversion and voltage regulation.
3. **Industrial power modules**:
- **Application examples**: Industrial equipment power modules, power converters.
- **Reason**: In industrial applications, the DTL7N80SJ-VB is able to handle high voltage loads, providing reliable power for industrial equipment while meeting stability requirements in high voltage environments.
4. **High Voltage Protection Circuit**:
- **Application Examples**: Voltage protector, overvoltage protection circuit.
- **Reason**: The high VDS characteristics of this MOSFET make it suitable for use in high voltage protection circuits, effectively protecting the circuit from overvoltage shocks and providing reliable protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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