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DTL7N70SJ-VB Product details
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Product Introduction
DTL7N70SJ-VB is a high voltage N-channel MOSFET in TO251 package. This MOSFET adopts SJ_Multi-EPI technology and has a drain-source voltage (VDS) capability of up to 700V, designed for applications that require high voltage tolerance. Its gate-source voltage range is ±30V and the threshold voltage (Vth) is 3.5V. DTL7N70SJ-VB provides relatively low on-resistance and high drain current capability, making it suitable for high voltage and high current applications.
DTL7N70SJ-VB is a high voltage N-channel MOSFET in TO251 package. This MOSFET adopts SJ_Multi-EPI technology and has a drain-source voltage (VDS) capability of up to 700V, designed for applications that require high voltage tolerance. Its gate-source voltage range is ±30V and the threshold voltage (Vth) is 3.5V. DTL7N70SJ-VB provides relatively low on-resistance and high drain current capability, making it suitable for high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: DTL7N70SJ-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: DTL7N70SJ-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
The high voltage withstand capability and low on-resistance of the DTL7N70SJ-VB MOSFET enable it to excel in multiple high voltage and high current applications, including:
1. **High Voltage Power Converter**: In high voltage power converters, this MOSFET can be used as a switching element to help convert high voltage DC to lower voltage DC. Its 700V drain-source voltage capability and low RDS(ON) enable it to effectively handle high voltages while keeping power consumption low.
2. **Power Inverter**: The DTL7N70SJ-VB is suitable for use in power inverters to convert DC to AC. Its high voltage handling capability and reliable switching performance make it an ideal choice for high voltage inverter circuits, suitable for use in photovoltaic power generation systems and wind power generation systems.
3. **High-voltage switching circuits**: In high-voltage switching circuits, the high drain-source voltage capability of this MOSFET allows it to control and switch high-voltage loads, suitable for high-voltage load switching and power distribution systems.
4. **Industrial motor drive**: Due to its high voltage tolerance and high current handling capabilities, the DTL7N70SJ-VB can be used as a switching element in industrial motor drive circuits, especially in motor control applications that require high voltage isolation and stable operation.
These applications demonstrate the excellent performance of the DTL7N70SJ-VB in high-voltage environments, especially for electronic devices and power management systems that require high voltage tolerance and high current handling.
The high voltage withstand capability and low on-resistance of the DTL7N70SJ-VB MOSFET enable it to excel in multiple high voltage and high current applications, including:
1. **High Voltage Power Converter**: In high voltage power converters, this MOSFET can be used as a switching element to help convert high voltage DC to lower voltage DC. Its 700V drain-source voltage capability and low RDS(ON) enable it to effectively handle high voltages while keeping power consumption low.
2. **Power Inverter**: The DTL7N70SJ-VB is suitable for use in power inverters to convert DC to AC. Its high voltage handling capability and reliable switching performance make it an ideal choice for high voltage inverter circuits, suitable for use in photovoltaic power generation systems and wind power generation systems.
3. **High-voltage switching circuits**: In high-voltage switching circuits, the high drain-source voltage capability of this MOSFET allows it to control and switch high-voltage loads, suitable for high-voltage load switching and power distribution systems.
4. **Industrial motor drive**: Due to its high voltage tolerance and high current handling capabilities, the DTL7N70SJ-VB can be used as a switching element in industrial motor drive circuits, especially in motor control applications that require high voltage isolation and stable operation.
These applications demonstrate the excellent performance of the DTL7N70SJ-VB in high-voltage environments, especially for electronic devices and power management systems that require high voltage tolerance and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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